scholarly journals Polarization Induced Electro-Functionalization of Pore Walls: A Contactless Technology

Biosensors ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 121 ◽  
Author(s):  
Bouchet-Spinelli ◽  
Descamps ◽  
Liu ◽  
Ismail ◽  
Pham ◽  
...  
Keyword(s):  
Solid State ◽  
Surface Functionalization ◽  
Silicon Oxide ◽  
Pore Wall ◽  
Electrical Current ◽  
Microfluidic Channels ◽  
The Core ◽  
Detection And Identification ◽  
Oxide Membrane ◽  
Silicon Silicon

This review summarizes recent advances in micro- and nanopore technologies with a focus on the functionalization of pores using a promising method named contactless electro-functionalization (CLEF). CLEF enables the localized grafting of electroactive entities onto the inner wall of a micro- or nano-sized pore in a solid-state silicon/silicon oxide membrane. A voltage or electrical current applied across the pore induces the surface functionalization by electroactive entities exclusively on the inside pore wall, which is a significant improvement over existing methods. CLEF’s mechanism is based on the polarization of a sandwich-like silicon/silicon oxide membrane, creating electronic pathways between the core silicon and the electrolyte. Correlation between numerical simulations and experiments have validated this hypothesis. CLEF-induced micro- and nanopores functionalized with antibodies or oligonucleotides were successfully used for the detection and identification of cells and are promising sensitive biosensors. This technology could soon be successfully applied to planar configurations of pores, such as restrictions in microfluidic channels.

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Unprecedented Hexa- and Undecanuclear Frameworks of Two New Tin(IV) Oxo Clusters Resulting from Partial Debenzylation Reactions

2010 ◽  
Vol 65 (11) ◽  
pp. 1293-s1308 ◽  
Author(s):  
Laurent Plasseraud ◽  
Hélène Cattey ◽  
Philippe Richard
Keyword(s):  
Solid State ◽  
1H Nmr Spectroscopy ◽  
Trifluoromethanesulfonic Acid ◽  
Synthetic Route ◽  
State Structure ◽  
X Ray Diffraction ◽  
Neutral Cluster ◽  
Broad Resonance ◽  
X Ray ◽  
The Core

A new and facile synthetic route to the known neutral cluster ((PhCH2)2SnO)6[((PhCH2)2SnOH)2- (CO3)]2 (2) as well as its reactivity toward trifluoromethanesulfonic acid (HO3SCF3, TfOH) are reported. The solid-state structure of the new solvate 2·6C7H8 has been determined by single-crystal X-ray diffraction. The core of 2 can be described as a pair of coplanar pentanuclear [(PhCH2)2SnO]5 ladders bridged at their ends by two carbonate groups. Successive additions of TfOH to a suspension of 2 in CD3CN were monitored by 119Sn{1H} NMR spectroscopy showing the transformation of the fingerprint of 2 (δ = −244, −246, −306 ppm), via new upfield signals, to a final broad resonance located at δ = −474 ppm. Thereafter, two unprecedented ionic monobenzyltin(IV) oxo clusters, 3 and 4, resulting from a debenzylation reaction and exhibiting unusual hexa- and undecanuclear frameworks, respectively, have been isolated as single crystals.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

The silicon–silicon oxide multilayers utilization as intrinsic layer on pin solar cells

2008 ◽  
Vol 516 (20) ◽  
pp. 6930-6933 ◽  
Author(s):  
H. Colder ◽  
P. Marie ◽  
F. Gourbilleau
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Silicon Silicon

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon

Technology for Formation of Hybrid Microfluidic Biosensor Systems for Label-Free Fluorimetric Express Detection of Protein Structures based on Molecular Recognition

2021 ◽  
Vol 23 (6) ◽  
pp. 300-306
Author(s):  
N.O. Sitkov ◽  
◽  
T.M. Zimina ◽  
V.V. Luchinin ◽  
A.A. Kolobov ◽  
...  
Keyword(s):  
Solid State ◽  
Comparative Study ◽  
Chemical Modification ◽  
Protein Structures ◽  
Microfluidic Channels ◽  
Label Free ◽  
Biomedical Analysis ◽  
Surface Deposition ◽  
Working Surface ◽  
Microfluidic Biosensor

The development and comparative study of technologies for manufacturing elements of hybrid biosensor systems intended for express biomedical analysis has been carried out. The technological process included the formation of the relief of microfluidic channels, chemical modification of their working surface, deposition of solid-state phosphor layers, sealing of the system, installation of inlet ports and packaging.

Low resistant and stable lithium-garnet electrolyte interface enabled by a multifunctional anode additive for solid-state lithium batteries

2021 ◽  
Author(s):  
Chencheng Cao ◽  
Yijun Zhong ◽  
Kimal Chandula Wasalathilake ◽  
Moses O. Tade ◽  
Xiaomin Xu ◽  
...  
Keyword(s):  
Solid State ◽  
Energy Density ◽  
Lithium Batteries ◽  
The Core ◽  
Intrinsic Stability ◽  
Electrolyte Interface ◽  
Lithium Garnet ◽  
Solid State Batteries ◽  
Core Part

Solid-state batteries (SSBs) have attracted considerable attention due to the high intrinsic stability and theoretical energy density. As the core part, garnet electrolyte has been extensively investigated due to high...

Sign in / Sign up

Export Citation Format

Share Document