scholarly journals Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

2019 ◽  
Vol 9 (17) ◽  
pp. 3531 ◽  
Author(s):  
Haewon Cho ◽  
Namgue Lee ◽  
Hyeongsu Choi ◽  
Hyunwoo Park ◽  
Chanwon Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Etch Rate ◽  
Chemical Properties ◽  
Atomic Layer ◽  
Process Window ◽  
Tem Analysis ◽  
Step Coverage ◽  
Wet Etch ◽  
N2 Plasma

Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200–500 °C, yielding approximately 0.38 Å/cycle, and featuring a wide process window. The physical and chemical properties of the SiNx films were investigated as a function of deposition temperature. As temperature was increased, transmission electron microscopy (TEM) analysis confirmed that a conformal thin film was obtained. Also, we developed a three-step process in which the H2 plasma step was introduced before the N2 plasma step. In order to investigate the effect of H2 plasma, we evaluated the growth rate, step coverage, and wet etch rate according to H2 plasma exposure time (10–30 s). As a result, the side step coverage increased from 82% to 105% and the bottom step coverages increased from 90% to 110% in the narrow pattern. By increasing the H2 plasma to 30 s, the wet etch rate was 32 Å/min, which is much lower than the case of only N2 plasma (43 Å/min).

Atomie Layer Epitaxy ia a Rotating Disk Reactor

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Liu ◽  
P. A. Zawadzki ◽  
P. E. Norris
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Atomic Layer ◽  
Rotating Disk ◽  
Atomic Layer Epitaxy ◽  
Process Window ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Group Iii ◽  
Reaction Complex

ABSTRACTCurrent difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

2017 ◽  
Vol 727 ◽  
pp. 907-914
Author(s):  
Wen Hui Tang ◽  
Yi Jia ◽  
Bo Cheng Zhang ◽  
Chang Wei Yang ◽  
You Zhi Qu ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Gas Mixture ◽  
X Ray ◽  
Layer Deposition

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3. The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate. The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1:1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 flow rate on the nitrogen content of the thin films.

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

2005 ◽  
Vol 11 (10) ◽  
pp. 415-419 ◽  
Author(s):  
J. Päiväsaari ◽  
J. Niinistö ◽  
K. Arstila ◽  
K. Kukli ◽  
M. Putkonen ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065012 ◽  
Author(s):  
J. Provine ◽  
Peter Schindler ◽  
Yongmin Kim ◽  
Steve P. Walch ◽  
Hyo Jin Kim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hydrofluoric Acid ◽  
Etch Rate ◽  
Atomic Layer ◽  
Film Density ◽  
Wet Etch

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies

2017 ◽  
Vol 9 (2) ◽  
pp. 1858-1869 ◽  
Author(s):  
Tahsin Faraz ◽  
Maarten van Drunen ◽  
Harm C. M. Knoops ◽  
Anupama Mallikarjunan ◽  
Iain Buchanan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Wet Etch ◽  
N2 Plasma

scholarly journals Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

2020 ◽  
Vol 117 (3) ◽  
pp. 031602 ◽  
Author(s):  
K. Arts ◽  
J. H. Deijkers ◽  
T. Faraz ◽  
R. L. Puurunen ◽  
W. M. M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Etch Rate ◽  
Atomic Layer ◽  
Low Energy ◽  
Layer Deposition ◽  
Wet Etch ◽  
Low Energy Ions
Sign in / Sign up

Export Citation Format

Share Document