scholarly journals Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

2020 ◽  
Vol 117 (3) ◽  
pp. 031602 ◽  
Author(s):  
K. Arts ◽  
J. H. Deijkers ◽  
T. Faraz ◽  
R. L. Puurunen ◽  
W. M. M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Etch Rate ◽  
Atomic Layer ◽  
Low Energy ◽  
Layer Deposition ◽  
Wet Etch ◽  
Low Energy Ions

(Invited) Role of Low-Energy Ions during Plasma-Enhanced Atomic Layer Deposition

2021 ◽  
Vol MA2021-02 (29) ◽  
pp. 877-877
Author(s):  
Karsten Arts ◽  
Wilhelmus M. M. Kessels ◽  
Harm Knoops
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Energy ◽  
Layer Deposition ◽  
Low Energy Ions

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies

2017 ◽  
Vol 9 (2) ◽  
pp. 1858-1869 ◽  
Author(s):  
Tahsin Faraz ◽  
Maarten van Drunen ◽  
Harm C. M. Knoops ◽  
Anupama Mallikarjunan ◽  
Iain Buchanan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Wet Etch ◽  
N2 Plasma

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

2016 ◽  
Vol 8 (27) ◽  
pp. 17599-17605 ◽  
Author(s):  
Yongmin Kim ◽  
J. Provine ◽  
Stephen P. Walch ◽  
Joonsuk Park ◽  
Witchukorn Phuthong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrofluoric Acid ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Etch Rates ◽  
Wet Etch

An Investigation of Silicon Oxide Thin Film by Atomic Layer Deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Joo-Hyeon Lee ◽  
Chang-Hee Han ◽  
Un-Jung Kim ◽  
Chong-Ook Park ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
P Type ◽  
Wet Etch ◽  
Deposited Film ◽  
Deposited Films

ABSTRACTSiO2 thin films were prepared on p-type Si (100) substrates by atomic layer deposition (ALD) using SiH2Cl2 and O3(1.5 at.%)/O2 as precursors at 300. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at about 0.35 nm/cycle with the reactant exposures of more than 3.6×109L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. The composition of the deposited film also varied with O3/O2 exposure at a fixed SiH2Cl2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the physical and electrical characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. In spite of low process temperature, the SiO2 film prepared by the ALD method was in wet etch rate, surface roughness, leakage current and breakdown voltage superior to that by other several CVD methods.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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