scholarly journals CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

2020 ◽  
Vol 10 (22) ◽  
pp. 8201
Author(s):  
Callum G. Littlejohns ◽  
David J. Rowe ◽  
Han Du ◽  
Ke Li ◽  
Weiwei Zhang ◽  
...  
Keyword(s):  
Rapid Prototyping ◽  
Silicon Photonics ◽  
Early Stage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Status ◽  
Small Scale ◽  
Processing Technologies ◽  
The Past ◽  
Quantum Photonics

The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

scholarly journals All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Feiying Sun ◽  
Changbin Nie ◽  
Xingzhan Wei ◽  
Hu Mao ◽  
Yupeng Zhang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Single Layer ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulator ◽  
Small Scale ◽  
Light Modulation ◽  
Optical Modulators ◽  
Signal Light ◽  
All Optical

Abstract Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.

scholarly journals A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 255 ◽  
Author(s):  
Quentin Wilmart ◽  
Houssein El Dirani ◽  
Nicola Tyler ◽  
Daivid Fowler ◽  
Stéphane Malhouitre ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Combs ◽  
High Data ◽  
Core Technology ◽  
Rate Transmission ◽  
Optical Phased Arrays ◽  
Integration Strategies

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.

scholarly journals Aluminium nitride integrated photonics: a review

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nanxi Li ◽  
Chong Pei Ho ◽  
Shiyang Zhu ◽  
Yuan Hsing Fu ◽  
Yao Zhu ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Devices ◽  
Wide Bandgap ◽  
Second Order ◽  
Oxide Semiconductor ◽  
Integrated Photonics ◽  
Nonlinear Optical Effect ◽  
The Past ◽  
Nonlinear Optical Devices

Abstract Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide compact solution for functional devices, and its fabrication process is compatible with the mature complementary metal-oxide-semiconductor (CMOS) fabrication technology. In the meanwhile, silicon material itself has a few limitations, including an indirect bandgap of 1.1 eV, transparency wavelength of >1.1 μm, and insignificant second-order nonlinear optical property. Aluminum nitride (AlN), as a CMOS-compatible material, can overcome these limitations. It has a wide bandgap of 6.2 eV, a broad transparency window covering from ultraviolet to mid-infrared, and a significant second-order nonlinear optical effect. Furthermore, it also exhibits piezoelectric and pyroelectric effects, which enable it to be utilized for optomechanical devices and pyroelectric photodetectors, respectively. In this review, the recent research works on integrated AlN photonics in the past decade have been reviewed and summarized. The related material properties of AlN have been summarized and presented. After that, the demonstrated functional devices, including linear optical devices, optomechanical devices, emitters, photodetectors, metasurfaces, and nonlinear optical devices, are reviewed and presented. Last but not the least, the summary and future outlook for the AlN-based integrated photonics are provided.

scholarly journals Online Nonlinear Error Compensation Circuit Based on Neural Networks

Machines ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 151
Author(s):  
Zhenyi Gao ◽  
Bin Zhou ◽  
Chunge Ju ◽  
Qi Wei ◽  
Xinxi Zhang ◽  
...  
Keyword(s):  
Machine Learning ◽  
Neural Networks ◽  
Power Consumption ◽  
Inertial Sensors ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Signal Frequency ◽  
Small Scale ◽  
Compensation Circuit

Nonlinear errors of sensor output signals are common in the field of inertial measurement and can be compensated with statistical models or machine learning models. Machine learning solutions with large computational complexity are generally offline or implemented on additional hardware platforms, which are difficult to meet the high integration requirements of microelectromechanical system inertial sensors. This paper explored the feasibility of an online compensation scheme based on neural networks. In the designed solution, a simplified small-scale network is used for modeling, and the peak-to-peak value and standard deviation of the error after compensation are reduced to 17.00% and 16.95%, respectively. Additionally, a compensation circuit is designed based on the simplified modeling scheme. The results show that the circuit compensation effect is consistent with the results of the algorithm experiment. Under SMIC 180 nm complementary metal-oxide semiconductor (CMOS) technology, the circuit has a maximum operating frequency of 96 MHz and an area of 0.19 mm2. When the sampling signal frequency is 800 kHz, the power consumption is only 1.12 mW. This circuit can be used as a component of the measurement and control system on chip (SoC), which meets real-time application scenarios with low power consumption requirements.

Recent advancements and vision toward stretchable bio-inspired networks for intelligent structures

2014 ◽  
Vol 13 (6) ◽  
pp. 609-620 ◽  
Author(s):  
Nathan Salowitz ◽  
Zhiqiang Guo ◽  
Surajit Roy ◽  
Raphael Nardari ◽  
Yu-Hung Li ◽  
...  
Keyword(s):  
Structural Health Monitoring ◽  
Health Monitoring ◽  
Hot Spot ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Small Scale ◽  
Integrated Networks ◽  
Structural Health ◽  
Ongoing Work ◽  
Parasitic Effects

Significant progress has recently been achieved in structural health monitoring, maturing the technology through quantification, validation, and verification to promote implementation and fielding of SHM. In addition, there is ongoing work seeking to detect damage precursors and to deploy structural health monitoring systems over large areas, moving the technology beyond hot-spot monitoring to global state sensing for full structural coverage. A large number of small sensors of multiple types are necessary in order to accomplish the goals of structural health monitoring, enabling increased sensing capabilities while reducing parasitic effects on host structures. Conventional sensors are large and heavy, adding to the weight of a structure and requiring physical accommodation without adding to and potentially degrading the strength of the overall structure. Increased numbers of sensors must also be deployed to span large areas while maintaining or increasing sensing resolution and capabilities. Traditionally, these sensors are assembled, wired, and installed individually, by hand, making mass deployment prohibitively time consuming and expensive. In order to overcome these limitations, the Structures and Composites Lab at Stanford University has worked to develop bio-inspired microfabricated stretchable sensor networks. Adopting the techniques of complementary metal-oxide semiconductor and microelectromechanical system fabrication, new methods are being developed to create integrated networks of large numbers of various micro-scale sensors, processors, switches, and all wiring in a single fabrication process. Then the networks are stretched to span areas orders of magnitude larger than the original fabrication area and deployed onto host structures. The small-scale components enable interlaminar installation in laminar composites or adhesive layers of built-up structures while simultaneously minimizing parasitic effects on the host structure. Additionally, data processing and interpretation capabilities could be embedded into the network before material integration to make the material truly multifunctional and intelligent once fully deployed. This article reviews the current accomplishments and future vision for these systems in the pursuit of state sensing and intelligent materials for self-diagnostics and health monitoring.

scholarly journals Evolution of etiology, presentation, management and prognostic tool in hepatocellular carcinoma

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Shu-Yein Ho ◽  
Po-Hong Liu ◽  
Chia-Yang Hsu ◽  
Cheng-Yuan Hsia ◽  
Yi-Hsiang Huang ◽  
...  
Keyword(s):  
Hepatocellular Carcinoma ◽  
Hepatitis B ◽  
Early Cancer ◽  
Early Stage ◽  
Current Status ◽  
Rank Test ◽  
Term Survival ◽  
Prognostic Tool ◽  
The Past ◽  
Staging Systems

Abstract Hepatocellular carcinoma (HCC) is the fourth leading cause of cancer-related death worldwide, but its current status is unclear. We aimed to investigate the evolution of etiology, presentation, management and prognostic tool in HCC over the past 12 years. A total of 3349 newly diagnosed HCC patients were enrolled and retrospectively analyzed. The comparison of survival was performed by the Kaplan-Meier method with the log-rank test. Hepatitis B and C virus infection in HCC were continuously declining over the three time periods (2004–2007, 2008–2011, 2012–2015; p < 0.001). At diagnosis, single tumor detection rate increased to 73% (p < 0.001), whereas vascular invasion gradually decreased to 20% in 2012–2015 (p < 0.001). Early stage HCC gradually increased from 2004–2007 to 2012–2015 (p < 0.001). The probability of patients receiving curative treatment and long-term survival increased from 2004–2007 to 2012–2015 (p < 0.001). The Cancer of Liver Italian Program (CLIP) and Taipei Integrated Scoring (TIS) system were two more accurate staging systems among all. In conclusion, the clinical presentations of HCC have significantly changed over the past 12 years. Hepatitis B and C virus-associated HCC became less common, and more patients were diagnosed at early cancer stage. Patient survival increased due to early cancer detection that results in increased probability to undergo curative therapies.

Thermal modeling of CMOS (complementary metal-oxide semiconductor) temperature and (or) flow microsensors

1991 ◽  
Vol 69 (3-4) ◽  
pp. 212-216 ◽  
Author(s):  
Kris Chau ◽  
Walter Allegretto ◽  
Ljubiśa Ristic
Keyword(s):  
Numerical Modeling ◽  
Metal Oxide ◽  
Thermal Modeling ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
The Past ◽  
Flow Sensing ◽  
Sensing Applications

In the past few years, it has become possible to construct CMOS (complementary metal-oxide semiconductor) microstructures suitable for temperature and (or) flow sensing applications. We present numerical modeling results for such structures, and discuss the effect several parameters have on the performance of such sensors.

scholarly journals TiO2 metasurfaces: From visible planar photonics to photochemistry

2019 ◽  
Vol 5 (11) ◽  
pp. eaax0939 ◽  
Author(s):  
Yunkai Wu ◽  
Wenhong Yang ◽  
Yubin Fan ◽  
Qinghai Song ◽  
Shumin Xiao
Keyword(s):  
Absorption Band ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
The Other ◽  
Oxide Semiconductor ◽  
Light Extinction ◽  
Light Extinction Coefficient ◽  
The Past ◽  
Cmos Compatible ◽  
20 Nm

TiO2 metasurfaces have been intensively studied in the past few years. To date, the TiO2 metadevices only used their high reflective index (n). The controllable light extinction coefficient (k) of TiO2 has not been exploited yet. Here, we converted TiO2 metasurfaces to black TiO2 metasurfaces and explored their new opportunities in photochemistry. A complementary metal oxide semiconductor (CMOS)–compatible technique has been developed to reversibly and precisely control the absorption of TiO2 metasurfaces without spoiling their internal nanostructures. Consequently, two types of black TiO2 metasurfaces were realized for photochemical experiments. The metasurface with an ultrawide absorption band can substantially enhance the white light absorption and accelerate the solar-based photochemistry process by a factor of 18.7. The other metasurface with an absorption band of <20 nm only responded to the resonant wavelengths, making the photochemistry process capable of being monitored in real time. In addition, the reversible switch between normal and black states makes TiO2 metasurfaces suitable for dynamic metadevices as well.

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