scholarly journals A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 255 ◽  
Author(s):  
Quentin Wilmart ◽  
Houssein El Dirani ◽  
Nicola Tyler ◽  
Daivid Fowler ◽  
Stéphane Malhouitre ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Combs ◽  
High Data ◽  
Core Technology ◽  
Rate Transmission ◽  
Optical Phased Arrays ◽  
Integration Strategies

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.

Silicon Photonics Co-integrated with Silicon Nitride for Optical Phased Arrays

2019 ◽  
Author(s):  
A. Marinins ◽  
S.P. Dwivedi ◽  
J.Ø. Kjellman ◽  
S. Kerman ◽  
T. David ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Phased Arrays ◽  
Optical Phased Arrays

scholarly journals Recent Progress in Silicon Photonics: A Review

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-27 ◽  
Author(s):  
Zhou Fang ◽  
Ce Zhou Zhao
Keyword(s):  
Integrated Circuits ◽  
Silicon Photonics ◽  
Recent Progress ◽  
State Of The Art ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
High Data ◽  
Bandwidth Requirement ◽  
Rate Transmission ◽  
Data Rate Transmission

With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.

Silicon photonics co-integrated with silicon nitride for optical phased arrays

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGE02
Author(s):  
Aleksandrs Marinins ◽  
Sarvagya P. Dwivedi ◽  
Jon Ø. Kjellman ◽  
Sarp Kerman ◽  
Tangla David ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Phased Arrays ◽  
Optical Phased Arrays

scholarly journals Laser soliton microcombs heterogeneously integrated on silicon

Science ◽  
2021 ◽  
Vol 373 (6550) ◽  
pp. 99-103
Author(s):  
Chao Xiang ◽  
Junqiu Liu ◽  
Joel Guo ◽  
Lin Chang ◽  
Rui Ning Wang ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Low Cost ◽  
High Capacity ◽  
Complementary Metal Oxide Semiconductor ◽  
Laser Frequency ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Mobile Platforms ◽  
Frequency Combs ◽  
On Chip

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection and ranging, or photonics-assisted signal processing. We report heterogeneously integrated laser soliton microcombs combining both indium phospide/silicon (InP/Si) semiconductor lasers and ultralow-loss silicon nitride (Si3N4) microresonators on a monolithic silicon substrate. Thousands of devices can be produced from a single wafer by using complementary metal-oxide-semiconductor–compatible techniques. With on-chip electrical control of the laser-microresonator relative optical phase, these devices can output single-soliton microcombs with a 100-gigahertz repetition rate. Furthermore, we observe laser frequency noise reduction due to self-injection locking of the InP/Si laser to the Si3N4 microresonator. Our approach provides a route for large-volume, low-cost manufacturing of narrow-linewidth, chip-based frequency combs for next-generation high-capacity transceivers, data centers, space and mobile platforms.

Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiNx:H Thin Film for Si-Based Optoelectronic Devices

2011 ◽  
Vol 171 ◽  
pp. 1-17 ◽  
Author(s):  
Sarab Preet Singh ◽  
Pankaj Srivastava
Keyword(s):  
Silicon Nitride ◽  
Complementary Metal Oxide Semiconductor ◽  
Cost Effective ◽  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Present Contribution ◽  
Dielectric Matrix ◽  
Si Nanostructures ◽  
Shi Irradiation

There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases. Our studies demonstrate that the least amount of hydrogen in the as-deposited (ASD) a-SiNx:H films not only allows in-situ formation of Si-nanostructures but also stabilizes silicon nitride (Si3N4) phase. The recent advances made in controlling the shape and size of Si-nanostructures embedded in a-SiNx:H matrix by swift heavy ion (SHI) irradiation are briefly discussed.

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