scholarly journals Modeling of Conduction and Switching Losses for IGBT and FWD Based on SVPWM in Automobile Electric Drives

2020 ◽  
Vol 10 (13) ◽  
pp. 4539
Author(s):  
Yuan Zhu ◽  
Mingkang Xiao ◽  
Xiezu Su ◽  
Gang Yang ◽  
Ke Lu ◽  
...  
Keyword(s):  
Pulse Width Modulation ◽  
Piecewise Linear ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Power Losses ◽  
Electric Drives ◽  
Switching Losses ◽  
Proposed Model ◽  
Experiment Validation ◽  
Large Benefit

The modeling of conduction and switching losses for insulated gate bipolar transistors (IGBTs) and free-wheeling diodes (FWDs) in automobile applications is becoming increasingly important, especially for the improvement of the system efficiency and the reliability prediction. The traditional modeling of conduction and switching losses based on the space vector pulse width modulation (SVPWM) is not applicable in practice due to the complex curve-fitting and the computation demands. In this paper, a simple and practical losses model for IGBTs and FWDs is proposed based on the SVPWM algorithm. Firstly, the traditional power losses model is introduced briefly. Then, the piecewise linear switching losses model and the conduction losses model based on the equivalent three-order harmonic model of the duty cycle are proposed. The comparison of experimental results between the traditional model and the proposed model is presented in the experiment validation. Furthermore, the power analyzer is adopted to measure the inverter losses, and the chips losses are further validated when other extra losses are considered. The proposed model shows good modeling accuracy with the large benefit of smaller measurement and lower computation requirements.

A Comparative Study of Power Semiconductor Devices for Industrial PWM Inverters

2016 ◽  
Vol 7 (4) ◽  
pp. 1420 ◽  
Author(s):  
Gianluca Sena ◽  
Roberto Marani ◽  
Gennaro Gelao ◽  
Anna Gina Perri
Keyword(s):  
Pulse Width Modulation ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Pwm Inverter ◽  
Power Semiconductor ◽  
Electric Drives ◽  
Different Temperatures ◽  
Energy Conversion Systems ◽  
The One ◽  
Gate Resistance

The growing demand of energy translates into efficiency requirements of energy conversion systems and electric drives. Both these systems are based on Pulse Width Modulation (PWM) Inverter. In this paper we firstly present the state of art of the main types of semiconductors devices for Industrial PWM Inverter. In particular we examine the last generations of Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) and we present a comparison between these devices, obtained by SPICE simulations, both for static characteristics at different temperatures and for dynamic ones at different gate resistance, in order to identify the one which makes the PWM inverter more efficient.

scholarly journals Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2372
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki ◽  
Janusz Zarębski
Keyword(s):  
Integrated Circuit ◽  
Bipolar Transistors ◽  
Classical Literature ◽  
Insulated Gate Bipolar Transistors ◽  
Spice Simulation ◽  
Proposed Model ◽  
Wide Range ◽  
Thermal Phenomena ◽  
Parameter Values ◽  
Good Agreement

This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device.

scholarly journals Comparative Analysis of SVM Techniques for a Five-Phase VSI Based on SiC Devices

Energies ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 6581
Author(s):  
Fernando Acosta-Cambranis ◽  
Jordi Zaragoza ◽  
Luis Romeral ◽  
Néstor Berbel
Keyword(s):  
Comparative Analysis ◽  
Pulse Width Modulation ◽  
Harmonic Distortion ◽  
Torque Ripple ◽  
Voltage Source ◽  
Power Splitting ◽  
Power Losses ◽  
Space Vector ◽  
Switching Losses ◽  
Harmonic Content

Multiphase systems provides benefits compared to three-phase systems, such as improved torque per ampere, high power density, better fault tolerance, lower current per phase (due to power-splitting among a higher number of phases), and lower torque ripple, among others. Depending on the application, the system must meet determined requirements, such as the presence of harmonic content, power losses, and common-mode voltage (CMV) generation. This paper presents a comparative analysis of space vector modulation (SVM) techniques applied to a five-phase voltage source inverter with SiC switches to provide an overview of their performance. The performance of five-phase 2L SVPWM (space vector pulse width modulation), 2L+2M SVPWM, 4L SVPWM techniques, and their discontinuous versions, are analyzed by focusing on harmonic content, power losses, and CMV generation using SiC semiconductor devices. Matlab/Simulink and PLECS simulations are performed to achieve the above mentioned goal. The use of different techniques allows (1) reducing the harmonic distortion when 2L+2M SVPWM and 4L SVPWM are applied, and (2) the switching sequence of the modulation techniques can influence the switching losses. Therefore, the use of SiC switches reduces the switching losses. (3) However, CMV dv/dt increases. Therefore, it is possible to minimize the effects of the CMV dv/dt and amplitude by choosing the adequate technique.

scholarly journals Power Loss Analysis in 15 Level Asymmetric Reduced Switch Inverter Using PLECS Thermal Model & SIMULINK Precise Models

2021 ◽  
Vol 54 (1) ◽  
pp. 73-84
Author(s):  
Gireesh Kumar Devineni ◽  
Aman Ganesh ◽  
Neerudi Bhoopal
Keyword(s):  
Pulse Width ◽  
Power Loss ◽  
Thermal Model ◽  
Pulse Width Modulation ◽  
Low Frequency ◽  
Switching Frequency ◽  
Power Losses ◽  
Loss Assessment ◽  
Switching Losses ◽  
High Switching Frequency

Power losses are the most critical metrics in power converters analysis and has a significant impact on economic and technological assessments due to its sufficient approximation. This article aims to prove that the power losses (Switching & Conduction losses) are very low in low frequency switching modulation in contrast with high switching frequency modulation. Two switching modulation techniques Phase Disposition (PD-multi carrier-based pulse width modulation at high switching frequency) and Selective Harmonic Elimination Pulse Width Modulation (SHEPWM-fundamental switching frequency) are considered for the power loss assessment in 15-level reduced switch asymmetric multi-level inverter. This work proposed a simplified model for calculation of switching losses in multilevel inverters using MATAB SIMULINK. Further, the thermal model of the proposed inverter is implemented on PLECS for analyzing the power losses. The comparative analysis of switching and conduction losses of the proposed inverter with the PLECS thermal model and MATLAB precise models are integral part of this research.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

scholarly journals Sensorless Control of Voltage Peaks in Class-E Single-Ended Resonant Inverter for Induction Heating Rice Cooker

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4545
Author(s):  
Yongseung Oh ◽  
Jaeeul Yeon ◽  
Jayoon Kang ◽  
Ilya Galkin ◽  
Wonsoek Oh ◽  
...  
Keyword(s):  
High Pressure ◽  
Breakdown Voltage ◽  
Induction Heating ◽  
Control Method ◽  
Supply Voltage ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Voltage Fluctuations ◽  
Resonant Inverter ◽  
Do So

Single-ended (SE) resonant inverters are widely used as power converters for high-pressure rice cooker induction, with 1200 V insulated-gate bipolar transistors (IGBTs) being used as switching devices for kW-class products. When voltage fluctuations occur at the input stage of an SE resonant inverter, the resonant voltage applied to the IGBT can be directly affected, potentially exceeding the breakdown voltage of the IGBT, resulting in its failure. Consequently, the resonant voltage should be limited to below a safety threshold—hardware resonant voltage limiting methods are generally used to do so. This paper proposes a sensorless resonant voltage control method that limits the increase in the resonant voltage caused by overvoltage or supply voltage fluctuations. By calculating and predicting the resonance voltage through the analysis of the resonance circuit, the resonance voltage is controlled not to exceed the breakdown voltage of the IGBT. The experimental results of a 1.35 kW SE resonant inverter for a high-pressure induction heating rice cooker were used to verify the validity of the proposed sensorless resonant voltage limiting method.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song
Keyword(s):  
High Voltage ◽  
Bipolar Transistors ◽  
Power Device ◽  
Insulated Gate Bipolar Transistors
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