scholarly journals Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS

2020 ◽  
Vol 10 (6) ◽  
pp. 2155
Author(s):  
Gobinath Jegannathan ◽  
Hans Ingelberts ◽  
Maarten Kuijk
Keyword(s):  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Drift Field ◽  
Trigger Detection ◽  
Breakdown Region ◽  
Functional Operation ◽  
Minority Carriers ◽  
A Current

A current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

UV-sensitive low dark-count PureB single-photon avalanche diode

2013 ◽  
Author(s):  
Lin Qi ◽  
K. R. C. Mok ◽  
Edoardo Charbon ◽  
Lis. K. Nanver ◽  
Mahdi Aminian ◽  
...  
Keyword(s):  
Single Photon ◽  
Dark Count ◽  
Avalanche Diode

Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection

2003 ◽  
Vol 83 (14) ◽  
pp. 2955-2957 ◽  
Author(s):  
Y. Kang ◽  
H. X. Lu ◽  
Y.-H. Lo ◽  
D. S. Bethune ◽  
W. P. Risk
Keyword(s):  
Quantum Efficiency ◽  
Single Photon ◽  
Avalanche Photodiodes ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection

scholarly journals Gigacount/second Photon Detection Module Based on an 8x8 Single-Photon Avalanche Diode Array

2016 ◽  
pp. 1-1 ◽  
Author(s):  
Francesco Ceccarelli ◽  
Angelo Gulinatti ◽  
Ivan Labanca ◽  
Ivan Rech ◽  
Massimo Ghioni
Keyword(s):  
Single Photon ◽  
Diode Array ◽  
Photon Detection ◽  
Avalanche Diode

UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

2014 ◽  
Vol 61 (11) ◽  
pp. 3768-3774 ◽  
Author(s):  
Lin Qi ◽  
K. R. C. Mok ◽  
Mahdi Aminian ◽  
Edoardo Charbon ◽  
Lis K. Nanver
Keyword(s):  
Single Photon ◽  
Dark Count ◽  
Avalanche Diode
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