Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection

2003 ◽  
Vol 83 (14) ◽  
pp. 2955-2957 ◽  
Author(s):  
Y. Kang ◽  
H. X. Lu ◽  
Y.-H. Lo ◽  
D. S. Bethune ◽  
W. P. Risk
2009 ◽  
Vol 615-617 ◽  
pp. 877-880 ◽  
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Jody Fronheiser ◽  
Peter M. Sandvik

4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized for operation in Geiger mode. An estimated dark current at a gain of 1000 was ranging between 0.4 pA (0.75 nA/cm2) and 20nA (38 A/cm2) on devices with an effective mesa diameter of 260 m. The electron beam induced current technique was used to image defects in the active region of studied devices. Increased reverse bias leakage current and increased Geiger mode dark count probability were correlated with the presence of large number of defects. Single photon detection efficiencies of up to 11% were measured at a wavelength of 266 nm in Geiger mode.


2010 ◽  
Vol 19 (8) ◽  
pp. 080308 ◽  
Author(s):  
Liu Yun ◽  
Wu Qing-Lin ◽  
Han Zheng-Fu ◽  
Dai Yi-Min ◽  
Guo Guang-Can

1996 ◽  
Vol 35 (12) ◽  
pp. 1956 ◽  
Author(s):  
S. Cova ◽  
M. Ghioni ◽  
A. Lacaita ◽  
C. Samori ◽  
F. Zappa

2005 ◽  
Author(s):  
William G. Lawrence ◽  
Christopher Stapels ◽  
Frank L. Augustine ◽  
James F. Christian

2004 ◽  
Vol 51 (9-10) ◽  
pp. 1351-1357 ◽  
Author(s):  
A. Dorokhov ◽  
A. Glauser ◽  
Y. Musienko ◽  
C. Regenfus ◽  
S. Reucroft ◽  
...  

Nano Letters ◽  
2018 ◽  
Vol 19 (1) ◽  
pp. 582-590 ◽  
Author(s):  
Alan C. Farrell ◽  
Xiao Meng ◽  
Dingkun Ren ◽  
Hyunseok Kim ◽  
Pradeep Senanayake ◽  
...  

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