Low Dark Count Rate and High Single Photon Detection Efficiency Avalanche Photodiode in Geiger-mode Operation

2006 ◽  
Author(s):  
Mingguo Liu ◽  
Xiaogang Bai ◽  
Chong Hu ◽  
Xiangyi Guo ◽  
Joe Campbell ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Geiger Mode ◽  
Photon Detection Efficiency

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

Soliton Pulse Gated InGaAs/InP Avalanche Photodiode for Low Dark Count Rate Single Photon Detection

2017 ◽  
Author(s):  
Ahmed C. Kadhim ◽  
Susan K Earles ◽  
Muhammad Riaz ◽  
Ahmad S. Azzahrani ◽  
Mano Rahul K Pakalapati
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Soliton Pulse

SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

2009 ◽  
Vol 19 (01) ◽  
pp. 85-92
Author(s):  
ALEXEY VERT ◽  
STANSILAV SOLOVIEV ◽  
JODY FRONHEISER ◽  
PETER SANDVIK
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Linear Mode ◽  
Solar Blind ◽  
Geiger Mode ◽  
Photon Detection Efficiency

A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

Quenching Circuit of Avalanche Diodes for Single Photon Detection

2013 ◽  
Vol 437 ◽  
pp. 1073-1076
Author(s):  
Qing Yao Xu ◽  
Hong Pei Wang ◽  
Xiang Chao Hu ◽  
Hai Qian ◽  
Ying Cheng Peng ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Free Running ◽  
Single Photon Avalanche Diodes ◽  
Running Mode

To reduce the afterpulsing in single photon detection based on avalanche diodes, an advanced passive quenching circuit for operation in free-running mode is developed. The measurement setup is designed. The dark count rate (DCR) and afterpulsing of Single photon avalanche diodes (SPADs) are measured. The results show that the new passive quenching circuit has a better afterpulsing performance compared to traditional circuits.

scholarly journals Automated Characterization of Single-Photon Avalanche Photodiode

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Aina Mardhiyah M. Ghazali ◽  
Audun Nystad Bugge ◽  
Sebastien Sauge ◽  
Vadim Makarov
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Counting ◽  
Avalanche Photodiode ◽  
Dark Count ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Photon Detection ◽  
Photon Detection Efficiency

We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode) (PerkinElmer C30902SH) komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V) pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW), kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD); single photon detector; photon counting; experiment automation

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

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