scholarly journals Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage

2020 ◽  
Vol 10 (3) ◽  
pp. 753
Author(s):  
Jee-Hun Jeong ◽  
Ju-Hong Cha ◽  
Goon-Ho Kim ◽  
Sung-Hwan Cho ◽  
Ho-Jun Lee
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Surface Region ◽  
Ring Structure ◽  
Oxide Semiconductor ◽  
Cross Sectional ◽  
Edge Termination ◽  
Additional Process ◽  
Aided Design ◽  
Sectional Structure

A novel edge-termination structure for a SiC trench metal–oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well (BPW) implantation region. The trench can be filled with oxide or gate materials. Indeed, it has almost the same cross-sectional structure as the active region of a SiC trench MOSFET. Therefore, there is little or no additional process loads. A conventional floating field ring (FFR) structure utilizes the spreading of the electric field in the periodically depleted surface region formed between a heavily doped equipotential region. On the other hand, in the trenched ring structure, an additional quasi-equipotential region is provided by the BPW region, which enables deeper and wider field-spreading profiles, and less field crowding at the edge region. The two-dimensional Technology Computer Aided Design (2D-TCAD) simulation results show that the proposed trenched ring-edge termination structures have an improved breakdown voltage compared to the conventional floating field ring structure.

scholarly journals 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 504
Author(s):  
Feng-Tso Chien ◽  
Zhi-Zhe Wang ◽  
Cheng-Li Lin ◽  
Tsung-Kuei Kang ◽  
Chii-Wen Chen ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Integrated System ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
Engineering Technology ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Aided Design ◽  
State Resistance

A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron,sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron,sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron,sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

Anthropometry-Based Surface Modeling of the Human Torso

1994 ◽  
Author(s):  
Peng Li ◽  
Peter R. M. Jones
Keyword(s):  
Human Body ◽  
Computer Aided Design ◽  
Three Dimensional ◽  
Human Growth ◽  
Surface Model ◽  
Cross Sectional ◽  
Practical Applications ◽  
Garment Design ◽  
Aided Design ◽  
Reference Body

Abstract There is an increasing need for computerized surface model of the human body in human growth, garment design and ergonomics. However, there is a shortage of three-dimensional (3-D) models of the human body in practical applications. This paper presents a new approach for constructing a 3-D surface model of the human torso using anthropometry. The torso is created by from a reference body of average shape which is represented by a family of cross-sectional curves. The shape and size of the reference body can be modified according to anthropometric data. This approach has been implemented on a personal computer. The resulting 3-D model is a parametric surface based on non-uniform B-splines and can easily be exported to other computer aided design applications.

scholarly journals A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)

2020 ◽  
Vol 10 (21) ◽  
pp. 7895
Author(s):  
Runze Chen ◽  
Lixin Wang ◽  
Hongkai Zhang ◽  
Mengyao Cui ◽  
Min Guo
Keyword(s):  
Electric Field ◽  
Epitaxial Layer ◽  
Computer Aided Design ◽  
Figure Of Merit ◽  
Cost Effective ◽  
Oxide Semiconductor ◽  
Fabrication Procedure ◽  
Conventional Structure ◽  
Aided Design ◽  
Reduced Surface

The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has been proposed. The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper epitaxial layer, the lower epitaxial layer and the middle epitaxial layer with higher doping concentration. The research shows that the reduced SURface field (RESURF) active has been enhanced due to the high doped epitaxial layer, which can modulate the electric field distribution and reduce the internal high electric field. Therefore, the HDGRSO UMOSFET has a higher breakdown voltage (BV), a lower on-state specific resistance (RSP) and a better figure of merit (FOM). According to the results of Technology Computer Aided Design (TCAD) simulations, the FOM (BV2/RSP) of HDSGRSO UMOSFET has been improved by 464%, and FOM (RSP × Qgd) of HDSGRSO UMOSFET has been reduced by 27.9% compared to the conventional structure, respectively, when the BV is 240 V. Furthermore, there is no extra special process required in this advanced fabrication procedure, which is relatively cost-effective and achievable.

scholarly journals Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1550 ◽  
Author(s):  
Yuliang Zhang ◽  
Xing Lu ◽  
Xinbo Zou
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Background Concentration ◽  
Model Parameters ◽  
Design Assessment ◽  
Blocking Voltage ◽  
Aided Design ◽  
Drift Layer

Device characteristics of GaN merged P-i-N Schottky (MPS) diodes were evaluated and studied via two-dimensional technology computer-aided design (TCAD) after calibrating model parameters and critical electrical fields with experimental proven results. The device’s physical dimensions and drift layer concentration were varied to study their influence on the device’s performance. Extending the inter-p-GaN region distance or the Schottky contact portion could enhance the forward conduction capability; however, this leads to compromised electrical field screening effects from neighboring PN junctions, as well as reduced breakdown voltage. By reducing the drift layer background concentration, a higher breakdown voltage was expected for MPSs, as a larger portion of the drift layer itself could be depleted for sustaining vertical reverse voltage. However, lowering the drift layer concentration would also result in a reduction in forward conduction capability. The method and results of this study provide a guideline for designing MPS diodes with target blocking voltage and forward conduction at a low bias.

Calculation of section modulus and moments of inertia of the 60E1 rail profile due to its head cross-section change

2019 ◽  
Vol 124 ◽  
pp. 99-114
Author(s):  
Jacek Makowski ◽  
Łukasz Stolarczyk ◽  
Paweł Muzolf
Keyword(s):  
Computer Aided Design ◽  
Basic Element ◽  
Railway Track ◽  
Lateral Direction ◽  
Cross Sectional ◽  
Moments Of Inertia ◽  
Section Modulus ◽  
Rail Vehicles ◽  
The Moment ◽  
Aided Design

The paper presents the theoretical foundations regarding the operational wear of rail heads. Rail, which constitute the basic element of the railway track, among others, guides the wheel in a lateral direction as well as enables a safe operation of rail vehicles. The criteria for the interaction of vehicles with the railway surface are described and the issues of interaction of the rail vehicle wheel with the rail is described. In the further part of the work an analysis of the influence of rail head wear of the 60E1 rail profile on the value of the moment of inertia Ix and sectional modulus Wx of this profile was carried out. The analysis was conducted on real, previously prepared samples of 60E1 operated rails. The methodology for calculating the geometric characteristics of cross-sectional characteristics of worn rails has been proposed using the Autodesk Autocad (Computer Aided Design software). The obtained values of moments of inertia and sectional modulus were compared with theoretical formulas described in the literature.

scholarly journals Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1422
Author(s):  
Ki-Yeong Kim ◽  
Joo-Seok Noh ◽  
Tae-Young Yoon ◽  
Jang-Hyun Kim
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Buffer Layers ◽  
Simulation Tool ◽  
Electrical Characteristics ◽  
Insulated Gate Bipolar Transistor ◽  
Computer Aided ◽  
Long Time ◽  
Tcad Simulation ◽  
Aided Design

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.

scholarly journals A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 91 ◽  
Author(s):  
Youlei Sun ◽  
Ying Wang ◽  
Jianxiang Tang ◽  
Wenju Wang ◽  
Yifei Huang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Buffer Layer ◽  
Computer Aided Design ◽  
Tunneling Current ◽  
Cathode Region ◽  
Schottky Barrier Diode ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Dimensional Electron Gas ◽  
Aided Design

In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.

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