scholarly journals Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors

2020 ◽  
Vol 8 ◽  
Author(s):  
Jeremy Alexander Davis ◽  
Maurizio Boscardin ◽  
Michele Crivellari ◽  
Livio Fanò ◽  
Matthew Large ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Amorphous Silicon ◽  
Silicon Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Hydrogenated Amorphous

scholarly journals Material parameters in thick hydrogenated amorphous silicon radiation detectors

1989 ◽  
Vol 114 ◽  
pp. 417-419 ◽  
Author(s):  
S. Quereshi ◽  
V. Perez-Mendez ◽  
S.N. Kaplan ◽  
I. Fujieda ◽  
G. Cho ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Material Parameters ◽  
Hydrogenated Amorphous

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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