scholarly journals Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

1991 ◽  
Author(s):  
S. Qureshi
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Radiation Hardness ◽  
Charge Collection ◽  
Material Parameters ◽  
Hydrogenated Amorphous

scholarly journals Material parameters in thick hydrogenated amorphous silicon radiation detectors

1989 ◽  
Vol 114 ◽  
pp. 417-419 ◽  
Author(s):  
S. Quereshi ◽  
V. Perez-Mendez ◽  
S.N. Kaplan ◽  
I. Fujieda ◽  
G. Cho ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Material Parameters ◽  
Hydrogenated Amorphous

Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

1985 ◽  
Vol 49 ◽  
Author(s):  
Martin Stutzmann ◽  
Warren B. Jackson ◽  
Chuang Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Mechanical Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Material Parameters ◽  
Kinetic Behaviour ◽  
Proposed Model ◽  
Special Cases ◽  
The Stability ◽  
Hydrogenated Amorphous

AbstractThe dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

Direct Measurement of the Mobiuty-Lifetime Product of Holes and Electrons in an Amorphous Silicon P-I-N Cell

1989 ◽  
Vol 149 ◽  
Author(s):  
Richard. S. Crandall ◽  
Kyle Sadlon ◽  
Jeffrey Kalina ◽  
Alan E. Delahoy
Keyword(s):  
Amorphous Silicon ◽  
Field Model ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Charge Collection ◽  
Uniform Field ◽  
Drift Length ◽  
Direct Measurements ◽  
Hydrogenated Amorphous ◽  
Photovoltaic Behavior

ABSTRACTDirect measurements of the electron and hole mobility-lifetime products, μτ, on a 10μm thick hydrogenated amorphous silicon (a-Si:H) pi- n solar cell are presented. The μτ products, determined from charge collection using strongly absorbed light are μτ|h = 2.2 × 10−8cm2V−1 and μτ|e = 3.0 × 10−7cm2V−1, for holes,and electrons, respectively. Measurements of the drift length, ld = μτ|e + μτ|h, using uniformly absorbed light and analyzed using the uniform field model,1 give ld = 2.9 × 10−7 cm2 V−1 s−1. These results are the first experimental evidence that the carrier with the larger, μτ product determines the photovoltaic behavior. Evidence for space charge limited transport of photogenerated holes is also be presented.

scholarly journals Material Parameters in a Thick Hydrogenated Amorphous Silicon Detector and their Effect on Signal Collection

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Qureshi ◽  
V. Perez-Mendez ◽  
S. N. Kaplan ◽  
I. Fujieda ◽  
G. Cho
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Detector ◽  
Dangling Bond ◽  
Material Parameters ◽  
Bond Density ◽  
Transient Photoconductivity ◽  
Signal Collection ◽  
Hydrogenated Amorphous

ABSTRACTTransient photoconductivity and ESR measurements were done to relate the ionized dangling bond density and the spin density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (∼30–35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential.

scholarly journals Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors

2020 ◽  
Vol 8 ◽  
Author(s):  
Jeremy Alexander Davis ◽  
Maurizio Boscardin ◽  
Michele Crivellari ◽  
Livio Fanò ◽  
Matthew Large ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Amorphous Silicon ◽  
Silicon Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Hydrogenated Amorphous
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