scholarly journals High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

10.2172/95260 ◽  
1995 ◽  
Author(s):  
Tao Jing
Keyword(s):  
Amorphous Silicon ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Hydrogenated Amorphous

Potential Profiles in Amorphous Alloys Devices

1989 ◽  
Vol 149 ◽  
Author(s):  
R. Vanderhaghen ◽  
C. Longeaud
Keyword(s):  
Amorphous Silicon ◽  
Spatial Resolution ◽  
Amorphous Alloys ◽  
Hydrogenated Amorphous Silicon ◽  
Time Of Flight ◽  
Internal Field ◽  
Field Profile ◽  
Schottky Structure ◽  
Hydrogenated Amorphous ◽  
Better Than

ABSTRACTThe standard time of flight technique is modified to analyse the internal field profiles in hydrogenated amorphous silicon or amorphous alloys devices. The spatial resolution of the field can be better than a thousand angstroms.With this method the internal field profile in a Schottky structure, built in the sandwich geometry Pt/a-SiGe:H/Cr, was studied. The field profile is found to decrease exponentially with the distance to the Pt/a-SiGe. We also underline the non-ohmic behaviour of the a-SiGe/Cr interface. The shape of the internal field along the intrinsic zone in P-I-N devices is also studied by the same method.The variations of the field profiles in both devices (Schottky and P-IN) with various applied DC biases is presented.

scholarly journals Material parameters in thick hydrogenated amorphous silicon radiation detectors

1989 ◽  
Vol 114 ◽  
pp. 417-419 ◽  
Author(s):  
S. Quereshi ◽  
V. Perez-Mendez ◽  
S.N. Kaplan ◽  
I. Fujieda ◽  
G. Cho ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Material Parameters ◽  
Hydrogenated Amorphous

scholarly journals Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors

2020 ◽  
Vol 8 ◽  
Author(s):  
Jeremy Alexander Davis ◽  
Maurizio Boscardin ◽  
Michele Crivellari ◽  
Livio Fanò ◽  
Matthew Large ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Amorphous Silicon ◽  
Silicon Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Detectors ◽  
Hydrogenated Amorphous

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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