scholarly journals Spin-active color centers in silicon carbide for telecom-compatible quantum technologies

2021 ◽  
Author(s):  
◽  
Tom Bosma
Keyword(s):  
Silicon Carbide ◽  
Color Centers

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

scholarly journals Silicon carbide color centers for quantum applications

2020 ◽  
Vol 2 (2) ◽  
pp. 022001 ◽  
Author(s):  
Stefania Castelletto ◽  
Alberto Boretti
Keyword(s):  
Silicon Carbide ◽  
Color Centers

Silicon on Silicon Carbide Ring Resonators for Coupling to Color Centers

2018 ◽  
Author(s):  
Chuting Wang ◽  
Evan Miyazono ◽  
Ioana Craiciu ◽  
Jake Rochman ◽  
Jonathan Kindem ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ring Resonators ◽  
Color Centers

scholarly journals Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Abram L. Falk ◽  
Paul V. Klimov ◽  
Bob B. Buckley ◽  
Viktor Ivády ◽  
Igor A. Abrikosov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Color Centers ◽  
Electron Spins

Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study

2013 ◽  
Vol 740-742 ◽  
pp. 641-644
Author(s):  
Bálint Somogyi ◽  
Viktor Zólyomi ◽  
Adam Gali
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Density Functional Calculations ◽  
Density Functional ◽  
Near Infrared ◽  
Living Cells ◽  
Time Dependent ◽  
Color Centers ◽  
Dependent Density

Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the nearinfrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

scholarly journals Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3177
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
Silicon Carbide ◽  
Spectral Properties ◽  
Room Temperature ◽  
Single Photon ◽  
Numerical Approach ◽  
Color Centers ◽  
Electrical Excitation ◽  
High Brightness ◽  
Quantum Photonics ◽  
First Time

Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 109 photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 107 photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.

scholarly journals Electron nuclear interactions in spin-3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study

2021 ◽  
Vol 104 (12) ◽  
Author(s):  
Victor A. Soltamov ◽  
Boris V. Yavkin ◽  
Georgy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ilia D. Breev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Field ◽  
Color Centers ◽  
Field Pulse ◽  
Nuclear Interactions ◽  
Pulse Epr
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