Laser writing of color centers in silicon carbide

2019 ◽  
Author(s):  
S. Castelletto ◽  
T. Katkus ◽  
S. Juodkazis
Keyword(s):  
Silicon Carbide ◽  
Color Centers ◽  
Laser Writing

scholarly journals Laser Writing of Scalable Single Color Centers in Silicon Carbide

Nano Letters ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 2377-2383 ◽  
Author(s):  
Yu-Chen Chen ◽  
Patrick S. Salter ◽  
Matthias Niethammer ◽  
Matthias Widmann ◽  
Florian Kaiser ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Color Centers ◽  
Laser Writing

scholarly journals Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 72
Author(s):  
Stefania Castelletto ◽  
Jovan Maksimovic ◽  
Tomas Katkus ◽  
Takeshi Ohshima ◽  
Brett C. Johnson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Photon ◽  
Pulsed Laser ◽  
Wide Bandgap ◽  
Color Centers ◽  
Laser Writing ◽  
Laser Fabrication ◽  
Vacancy Defects ◽  
Sensing Applications ◽  
Bandgap Semiconductors

Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

scholarly journals Laser writing of nitrogen-doped silicon carbide for biological modulation

2020 ◽  
Vol 6 (34) ◽  
pp. eaaz2743
Author(s):  
Vishnu Nair ◽  
Jaeseok Yi ◽  
Dieter Isheim ◽  
Menahem Rotenberg ◽  
Lingyuan Meng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Semiconducting Materials ◽  
Laser Writing ◽  
Photoelectrochemical Activity ◽  
Nitrogen Doped ◽  
Isolated Hearts ◽  
Composite Configuration ◽  
Polymeric Substrates ◽  
Cubic Silicon Carbide ◽  
Inexpensive Technique

Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC). The dense 3C-SiC surface layer is connected to the PDMS matrix via a spongy graphite layer, facilitating electrochemical and photoelectrochemical activity. We demonstrate the fabrication of arbitrary two-dimensional (2D) SiC-based patterns in PDMS and freestanding 3D constructs. To establish the functionality of the laser-produced composite, we apply it as flexible electrodes for pacing isolated hearts and as photoelectrodes for local peroxide delivery to smooth muscle sheets.

scholarly journals Silicon carbide color centers for quantum applications

2020 ◽  
Vol 2 (2) ◽  
pp. 022001 ◽  
Author(s):  
Stefania Castelletto ◽  
Alberto Boretti
Keyword(s):  
Silicon Carbide ◽  
Color Centers

Silicon on Silicon Carbide Ring Resonators for Coupling to Color Centers

2018 ◽  
Author(s):  
Chuting Wang ◽  
Evan Miyazono ◽  
Ioana Craiciu ◽  
Jake Rochman ◽  
Jonathan Kindem ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ring Resonators ◽  
Color Centers

Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing

2018 ◽  
Vol 43 (24) ◽  
pp. 6077 ◽  
Author(s):  
S. Castelletto ◽  
A. F. M. Almutairi ◽  
K. Kumagai ◽  
T. Katkus ◽  
Y. Hayasaki ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Laser Writing

scholarly journals Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Abram L. Falk ◽  
Paul V. Klimov ◽  
Bob B. Buckley ◽  
Viktor Ivády ◽  
Igor A. Abrikosov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Color Centers ◽  
Electron Spins
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