scholarly journals Electron nuclear interactions in spin-3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study

2021 ◽  
Vol 104 (12) ◽  
Author(s):  
Victor A. Soltamov ◽  
Boris V. Yavkin ◽  
Georgy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ilia D. Breev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Field ◽  
Color Centers ◽  
Field Pulse ◽  
Nuclear Interactions ◽  
Pulse Epr

Revisiting the nitrosyl complex of myoglobin by high-field pulse EPR spectroscopy and quantum mechanical calculations

2010 ◽  
Vol 12 (26) ◽  
pp. 7276 ◽  
Author(s):  
Marina Radoul ◽  
Mahesh Sundararajan ◽  
Alexey Potapov ◽  
Christoph Riplinger ◽  
Frank Neese ◽  
...  
Keyword(s):  
Epr Spectroscopy ◽  
High Field ◽  
Quantum Mechanical ◽  
Quantum Mechanical Calculations ◽  
Nitrosyl Complex ◽  
Field Pulse ◽  
Pulse Epr

High-field pulse EPR instrumentation

2009 ◽  
pp. 216-233 ◽  
Author(s):  
Graham M. Smith ◽  
Paul A. S. Cruickshank ◽  
David R. Bolton ◽  
Duncan A. Robertson
Keyword(s):  
High Field ◽  
Field Pulse ◽  
Pulse Epr

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

scholarly journals Silicon carbide color centers for quantum applications

2020 ◽  
Vol 2 (2) ◽  
pp. 022001 ◽  
Author(s):  
Stefania Castelletto ◽  
Alberto Boretti
Keyword(s):  
Silicon Carbide ◽  
Color Centers

High field pulse magnet backed up with hydraulic pressure

1992 ◽  
Vol 177 (1-4) ◽  
pp. 27-30 ◽  
Author(s):  
A. Yamagishi ◽  
K. Tokumoto ◽  
K. Taniguchi ◽  
O. Kondo ◽  
M. Date
Keyword(s):  
High Field ◽  
Hydraulic Pressure ◽  
Field Pulse ◽  
Pulse Magnet
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