scholarly journals Effects of the thermal annealing on the thermoelectric properties of Ga-doped ZnO thin films

2019 ◽  
Vol 2 (4) ◽  
pp. 155-160
Author(s):  
Ngoc Hong Nguyen ◽  
Thu Nguyen Bao Le ◽  
Thang Bach Phan
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Photoluminescence ◽  
Zinc Interstitial ◽  
Doped Zno

We deposited successfully Ga-doped ZnO (GZO) thin films by using magnetron Dcsputtering technique, followed by annealing. The effects of the thermal annealing on thermoelectric properties of GZO films were investigated. The obtained results showed that due to annealing, the thermoelectric properties of the GZO films were significantly enhanced: (1) power factor increased with an increase of electron mobility due to high film crystallinity; (2) The figure of merit ZT values of the GZO film annealed at 500 oC (ZT = 0.114) was one order higher the asdeposited GZO film (ZT = 0.012). The room temperature photoluminescence (PL) spectra depicted various kinds of point defects which controlled thermoelectric properties and both oxygen vacancies VO and zinc interstitial Zni played an important role.

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

2006 ◽  
Vol 100 (11) ◽  
pp. 113515 ◽  
Author(s):  
Jong Hoon Kim ◽  
Byung Du Ahn ◽  
Choong Hee Lee ◽  
Kyung Ah Jeon ◽  
Hong Seong Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

scholarly journals Effect of Annealing on the Structure and Photoluminescence of Eu-Doped ZnO Nanorod Ordered Array Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Wen-Wu Zhong ◽  
Da-Wei Guan ◽  
Yue-Lin Liu ◽  
Li Zhang ◽  
Yan-Ping Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Nanorod Array ◽  
Diffraction Peak ◽  
Zno Nanorod ◽  
Room Temperature Photoluminescence ◽  
Glass Substrates ◽  
Ordered Array ◽  
Doped Zno ◽  
And Shifts

Eu-doped ZnO nanorod ordered array thin films were synthesized on glass substrates with a ZnO seed layer via hydrothermal method. XRD reveals that the (002) diffraction peak of films annealed in hydrogen is sharper than that annealed in air. SEM reveals that the nanorods of films annealed in hydrogen are shortened and widened. TEM results demonstrate that the nanorods are single crystalline and the lattice spacing of 0.52 nm agrees with thedspacing of (001) crystal planes alongc-axis. Room temperature photoluminescence (PL) reveals that the PL of films annealed in hydrogen is the strongest and shifts to lower wavenumber. The point defect of Eu-doped ZnO nanorod array thin film is transferred fromOitoOZnby annealing in hydrogen.

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

Thermoelectric Properties of Bi-Sb-Te-X Compounds Prepared by MA-PDS Method

2001 ◽  
Vol 691 ◽  
Author(s):  
Yong-Ho Park ◽  
Liu Xue-Dong
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Ag Addition

ABSTRACTA great potential for further improving the room-temperature figure of merit (Z) has been identified by dispersing a small fraction of Ag in the (Bi0.25Sb0.75)2Te3 alloy. The maximum Z of 3.41×10−3K−1, 17% higher than that of the unadded, is attained at 0.02wt% Ag. Addition of BN, either alone or in combination with Ag, however, does not generate a favorable figure of merit.

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