scholarly journals Effect of Annealing on the Structure and Photoluminescence of Eu-Doped ZnO Nanorod Ordered Array Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Wen-Wu Zhong ◽  
Da-Wei Guan ◽  
Yue-Lin Liu ◽  
Li Zhang ◽  
Yan-Ping Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Nanorod Array ◽  
Diffraction Peak ◽  
Zno Nanorod ◽  
Room Temperature Photoluminescence ◽  
Glass Substrates ◽  
Ordered Array ◽  
Doped Zno ◽  
And Shifts

Eu-doped ZnO nanorod ordered array thin films were synthesized on glass substrates with a ZnO seed layer via hydrothermal method. XRD reveals that the (002) diffraction peak of films annealed in hydrogen is sharper than that annealed in air. SEM reveals that the nanorods of films annealed in hydrogen are shortened and widened. TEM results demonstrate that the nanorods are single crystalline and the lattice spacing of 0.52 nm agrees with thedspacing of (001) crystal planes alongc-axis. Room temperature photoluminescence (PL) reveals that the PL of films annealed in hydrogen is the strongest and shifts to lower wavenumber. The point defect of Eu-doped ZnO nanorod array thin film is transferred fromOitoOZnby annealing in hydrogen.

The Growth of Transparent Conductive Al-Doped ZnO Thin Films at Room Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 211-214
Author(s):  
Sang Moo Park ◽  
Takashi Tomemori ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Flexible Display ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Flexible Solar Cell ◽  
Doped Zno

High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth condition in terms of oxygen pressure. The structure and electrical and optical properties of the as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83% was obtained. The present results suggest that optimized AZO films should be very useful and effective for flexible display, top emission type of OLEDs and for various other kinds of optoelectronic devices such as flexible solar cell or passive photo device.

Photoluminescence Properties of Defect Emissions in Al-Doped ZnO Nanorod Array Thin Films

2013 ◽  
Vol 13 (9) ◽  
pp. 6226-6230 ◽  
Author(s):  
Soaram Kim ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
Hyunsik Yoon ◽  
Min Su Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Photoluminescence Properties ◽  
Doped Zno ◽  
Zno Nanorod Array

Visible Light-activated Room Temperature NO2 Sensing with Au-ZnO Nanorod Array Thin Films

2019 ◽  
Author(s):  
Chunxu Chen ◽  
Qiuping Zhang ◽  
Hong Pan ◽  
Guangzhong Xie ◽  
Yuanjie Su ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Room Temperature ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Zno Nanorod Array

Optical Parameters of Al-Doped ZnO Nanorod Array Thin Films Grown via the Hydrothermal Method

2013 ◽  
Vol 13 (9) ◽  
pp. 6183-6188 ◽  
Author(s):  
Soaram Kim ◽  
Min Su Kim ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
Hyunsik Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrothermal Method ◽  
Nanorod Array ◽  
Optical Parameters ◽  
Zno Nanorod ◽  
Doped Zno ◽  
Zno Nanorod Array

scholarly journals Effects of the thermal annealing on the thermoelectric properties of Ga-doped ZnO thin films

2019 ◽  
Vol 2 (4) ◽  
pp. 155-160
Author(s):  
Ngoc Hong Nguyen ◽  
Thu Nguyen Bao Le ◽  
Thang Bach Phan
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Photoluminescence ◽  
Zinc Interstitial ◽  
Doped Zno

We deposited successfully Ga-doped ZnO (GZO) thin films by using magnetron Dcsputtering technique, followed by annealing. The effects of the thermal annealing on thermoelectric properties of GZO films were investigated. The obtained results showed that due to annealing, the thermoelectric properties of the GZO films were significantly enhanced: (1) power factor increased with an increase of electron mobility due to high film crystallinity; (2) The figure of merit ZT values of the GZO film annealed at 500 oC (ZT = 0.114) was one order higher the asdeposited GZO film (ZT = 0.012). The room temperature photoluminescence (PL) spectra depicted various kinds of point defects which controlled thermoelectric properties and both oxygen vacancies VO and zinc interstitial Zni played an important role.

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

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