scholarly journals Near-surface titanium dioxide damage after irradiation with swift heavy ions

2017 ◽  
Vol 85 (1) ◽  
pp. 47-54
Author(s):  
V.A. Skuratov ◽  
◽  
M.M. Saifulin ◽  
G.M. Aralbayeva ◽  
J.H. O’Connell ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Heavy Ions ◽  
Near Surface ◽  
Swift Heavy Ions

scholarly journals Near-surface titanium dioxide damage after irradiation with swift heavy ions

2017 ◽  
Vol 85 (1) ◽  
pp. 47-54
Author(s):  
V.A. Skuratov ◽  
◽  
M.M. Saifulin ◽  
G.M. Aralbayeva ◽  
J.H. O’Connell ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Heavy Ions ◽  
Near Surface ◽  
Swift Heavy Ions

Structure of latent tracks in rutile single crystal of titanium dioxide induced by swift heavy ions

2006 ◽  
Vol 100 (4) ◽  
pp. 044308 ◽  
Author(s):  
Koichi Awazu ◽  
Xiaomin Wang ◽  
Makoto Fujimaki ◽  
Tetsuo Komatsubara ◽  
Takahiro Ikeda ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Single Crystal ◽  
Heavy Ions ◽  
Swift Heavy Ions

Photonic crystals of titanium dioxide fabricated by swift heavy ions

2005 ◽  
Vol 40 (2-6) ◽  
pp. 722-729 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara
Keyword(s):  
Titanium Dioxide ◽  
Photonic Crystals ◽  
Heavy Ions ◽  
Swift Heavy Ions

Electronic structure modification and Fermi level shifting in niobium-doped anatase titanium dioxide thin films: a comparative study of NEXAFS, work function and stiffening of phonons

2016 ◽  
Vol 18 (5) ◽  
pp. 3618-3627 ◽  
Author(s):  
Subodh K. Gautam ◽  
Arkaprava Das ◽  
S. Ojha ◽  
D. K. Shukla ◽  
D. M. Phase ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electronic Structure ◽  
Work Function ◽  
Heavy Ions ◽  
Electronic Excitations ◽  
Structure Modification ◽  
Swift Heavy Ions ◽  
Niobium Doped ◽  
Titanium Dioxide Thin Films

The electronic structure and tuning of work function (WF) by electronic excitations (EEs) induced by swift heavy ions (SHIs) in anatase niobium-doped titanium dioxide (NTO) thin films is reported.

Specimen Preparation of Near Surface Ion Irradiated Samples

1985 ◽  
Vol 43 ◽  
pp. 170-171
Author(s):  
K. F. Russell ◽  
L. L. Horton
Keyword(s):  
Radiation Damage ◽  
Heavy Ions ◽  
Target Material ◽  
Metal Alloys ◽  
Specimen Surface ◽  
Specimen Preparation ◽  
Particle Accelerators ◽  
Near Surface ◽  
Graaff Accelerator ◽  
Van De Graaff

Beams of heavy ions from particle accelerators are used to produce radiation damage in metal alloys. The damaged layer extends several microns below the surface of the specimen with the maximum damage and depth dependent upon the energy of the ions, type of ions, and target material. Using 4 MeV heavy ions from a Van de Graaff accelerator causes peak damage approximately 1 μm below the specimen surface. To study this area, it is necessary to remove a thickness of approximately 1 μm of damaged metal from the surface (referred to as “sectioning“) and to electropolish this region to electron transparency from the unirradiated surface (referred to as “backthinning“). We have developed electropolishing techniques to obtain electron transparent regions at any depth below the surface of a standard TEM disk. These techniques may be applied wherever TEM information is needed at a specific subsurface position.

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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