Structure of latent tracks in rutile single crystal of titanium dioxide induced by swift heavy ions

2006 ◽  
Vol 100 (4) ◽  
pp. 044308 ◽  
Author(s):  
Koichi Awazu ◽  
Xiaomin Wang ◽  
Makoto Fujimaki ◽  
Tetsuo Komatsubara ◽  
Takahiro Ikeda ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Single Crystal ◽  
Heavy Ions ◽  
Swift Heavy Ions

scholarly journals Near-surface titanium dioxide damage after irradiation with swift heavy ions

2017 ◽  
Vol 85 (1) ◽  
pp. 47-54
Author(s):  
V.A. Skuratov ◽  
◽  
M.M. Saifulin ◽  
G.M. Aralbayeva ◽  
J.H. O’Connell ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Heavy Ions ◽  
Near Surface ◽  
Swift Heavy Ions

Dielectric Studies on Swift Heavy Ions and Electron Irradiated Organic Single Crystal

2011 ◽  
Author(s):  
Vincent Crasta ◽  
V. Ravindrachary ◽  
P. C. Rajesh Kumar ◽  
S. Ganesh ◽  
Alka B. Garg ◽  
...  
Keyword(s):  
Single Crystal ◽  
Heavy Ions ◽  
Dielectric Studies ◽  
Swift Heavy Ions ◽  
Organic Single Crystal

Photonic crystals of titanium dioxide fabricated by swift heavy ions

2005 ◽  
Vol 40 (2-6) ◽  
pp. 722-729 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara
Keyword(s):  
Titanium Dioxide ◽  
Photonic Crystals ◽  
Heavy Ions ◽  
Swift Heavy Ions

scholarly journals Near-surface titanium dioxide damage after irradiation with swift heavy ions

2017 ◽  
Vol 85 (1) ◽  
pp. 47-54
Author(s):  
V.A. Skuratov ◽  
◽  
M.M. Saifulin ◽  
G.M. Aralbayeva ◽  
J.H. O’Connell ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Heavy Ions ◽  
Near Surface ◽  
Swift Heavy Ions

Electronic structure modification and Fermi level shifting in niobium-doped anatase titanium dioxide thin films: a comparative study of NEXAFS, work function and stiffening of phonons

2016 ◽  
Vol 18 (5) ◽  
pp. 3618-3627 ◽  
Author(s):  
Subodh K. Gautam ◽  
Arkaprava Das ◽  
S. Ojha ◽  
D. K. Shukla ◽  
D. M. Phase ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electronic Structure ◽  
Work Function ◽  
Heavy Ions ◽  
Electronic Excitations ◽  
Structure Modification ◽  
Swift Heavy Ions ◽  
Niobium Doped ◽  
Titanium Dioxide Thin Films

The electronic structure and tuning of work function (WF) by electronic excitations (EEs) induced by swift heavy ions (SHIs) in anatase niobium-doped titanium dioxide (NTO) thin films is reported.

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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