scholarly journals TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS

2018 ◽  
Author(s):  
C.A. Chapin ◽  
K.M. Dowling ◽  
H.P. Phan ◽  
R. Chen ◽  
D.G. Senesky
Keyword(s):  
Electron Mobility ◽  
Pressure Sensors ◽  
Transient Behavior ◽  
High Electron ◽  
Temperature Dependent ◽  
High Electron Mobility

InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

2017 ◽  
Vol 263 ◽  
pp. 216-223 ◽  
Author(s):  
Caitlin A. Chapin ◽  
Ruth A. Miller ◽  
Karen M. Dowling ◽  
Ruiqi Chen ◽  
Debbie G. Senesky
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
Pressure Sensors ◽  
High Electron ◽  
High Electron Mobility

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

2013 ◽  
Vol 194 ◽  
pp. 247-251 ◽  
Author(s):  
E.D. Le Boulbar ◽  
M.J. Edwards ◽  
S. Vittoz ◽  
G. Vanko ◽  
K. Brinkfeldt ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Pressure Sensors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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