Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K

2005 ◽  
Vol 152 (10) ◽  
pp. G778 ◽  
Author(s):  
Yu-Shyan Lin ◽  
Yu-Lung Hsieh
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Temperature Dependent ◽  
High Electron Mobility

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

2012 ◽  
Vol 101 (19) ◽  
pp. 192102 ◽  
Author(s):  
T. Hofmann ◽  
P. Kühne ◽  
S. Schöche ◽  
Jr-Tai Chen ◽  
U. Forsberg ◽  
...  
Keyword(s):  
Effective Mass ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Temperature Dependent ◽  
High Electron Mobility

Temperature-Dependent Characteristics of a Pseudomorphic High Electron Mobility Transistor with Graded Triple Delta-Doped Sheets

2008 ◽  
Vol 155 (12) ◽  
pp. H995 ◽  
Author(s):  
Li-Yang Chen ◽  
Shiou-Ying Cheng ◽  
Tzu-Pin Chen ◽  
Tsung-Han Tsai ◽  
Yi-Chun Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Temperature Dependent ◽  
High Electron Mobility
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