Temperature-dependent hydrogen sensing characteristics of a Pd∕oxide∕Al0.24Ga0.76As high electron mobility transistor

2004 ◽  
Vol 40 (25) ◽  
pp. 1608 ◽  
Author(s):  
C.-C. Cheng ◽  
Y.-Y. Tsai ◽  
K.-W. Lin ◽  
H.-I. Chen ◽  
W.-H. Hsu ◽  
...  
2007 ◽  
Vol 539-543 ◽  
pp. 5025-5030 ◽  
Author(s):  
Kun Wei Lin

In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied.


2007 ◽  
Vol 90 (25) ◽  
pp. 253503 ◽  
Author(s):  
Yan-Ying Tsai ◽  
Kun-Wei Lin ◽  
Huey-Ing Chen ◽  
Ching-Wen Hung ◽  
Tzu-Pin Chen ◽  
...  

2009 ◽  
Vol 94 (1) ◽  
pp. 012102 ◽  
Author(s):  
Tsung-Han Tsai ◽  
Huey-Ing Chen ◽  
Chung-Fu Chang ◽  
Po-Shun Chiu ◽  
Yi-Chun Liu ◽  
...  

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