scholarly journals Sub-nanosecond, megawatt compact diode-pumped Nd:YLF laser

2018 ◽  
Vol 64 (5) ◽  
pp. 512 ◽  
Author(s):  
Roger Sean Cudney ◽  
Citlali Minor

We present a compact source of sub-nanosecond infrared laser pulses. The system is a diode-pumped, passively Q-switched Nd:YLF laser that emits 1.047µm pulses with a FWHM duration of 750 ps, an energy of 2.3 mJ per pulse at a repetition rate of over 40 Hz. We also provide a simple rate-equation model that adequately describes the experimental results. This laser is ideal for several applications that require energetic sub-nanosecond pulses that cannot be obtained easily with actively Q-switched lasers or mode-locked lasers.

2006 ◽  
Vol 16 (09) ◽  
pp. 2689-2696 ◽  
Author(s):  
S. P. NG ◽  
D. Y. TANG ◽  
L. J. QIN ◽  
X. L. MENG ◽  
Z. J. XIONG

We report on the experimental observation of dynamic behaviors in diode pumped passively Q-switched Nd:GdVO 4 and Nd:YVO 4 lasers. In addition to the period-doubling route to chaos, various periodic windows have also been observed. Based on an extended rate equation model the chaotic nature of the lasers is numerically simulated. It was found that under the experimental condition the model could qualitatively reproduce the experimental observations.


2021 ◽  
Vol 9 ◽  
Author(s):  
Jörg Körner ◽  
Venkatesan Jambunathan ◽  
Fangxin Yue ◽  
Jürgen Reiter ◽  
Ondřej Slezák ◽  
...  

Abstract We present a diode-pumped, electro-optically Q-switched Tm:YAG laser with a cryogenically cooled laser crystal at 120 K. Output pulses of up to 2.55 mJ and 650 ns duration were demonstrated in an actively Q-switched configuration with a repetition rate of 1 Hz. By using cavity dumping the pulse duration was shortened to 18 ns with only a slightly lower output energy of 2.22 mJ. Furthermore, using a simplified rate equation model, we discuss design constraints on the pump fluence in a pulse pump approach for Tm:YAG to maximize the energy storage capability at a given pump power.


2019 ◽  
Vol 9 (19) ◽  
pp. 4160 ◽  
Author(s):  
Ryu ◽  
Ryu ◽  
Onwukaeme

We compared the efficiency droop of InGaN multiple-quantum-well (MQW) blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates and analyzed the efficiency droop characteristics using the rate equation model with reduced effective active volume. The efficiency droop of the LED sample on silicon was observed to be reduced considerably compared with that of the identical LED sample on sapphire substrates. When the measured external quantum efficiency was fitted with the rate equation model, the effective active volume of the MQW on silicon was found to be ~1.45 times larger than that of the MQW on sapphire. The lower efficiency droop in the LED on silicon could be attributed to its larger effective active volume compared with the LED on sapphire. The simulation results showed that the effective active volume decreased as the internal electric fields increased, as a result of the reduced overlap of the electron and hole distribution inside the quantum well and the inhomogeneous carrier distribution in the MQWs. The difference in the internal electric field of the MQW between the LED on silicon and sapphire could be a major reason for the difference in the effective active volume, and consequently, the efficiency droop.


2008 ◽  
Vol 33 (10) ◽  
pp. 1111 ◽  
Author(s):  
Christoph Wandt ◽  
Sandro Klingebiel ◽  
Mathias Siebold ◽  
Zsuzsanna Major ◽  
Joachim Hein ◽  
...  

2019 ◽  
Vol 6 (12) ◽  
pp. 3493-3500
Author(s):  
Jin Hee Lee ◽  
Satendra Pal Singh ◽  
Minseuk Kim ◽  
Myoungho Pyo ◽  
Woon Bae Park ◽  
...  

A novel multi-color-emissive phosphor (Ca1.624Sr0.376Si5O3N6:Eu2+) and a rate equation model to elucidate the mechanism of energy-transfer leading to broadband emission.


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