Principal facts for fifty-six gravity stations near the Diamond Peak Wlderness Area, Oregon

1982 ◽  
Author(s):  
Carol Finn ◽  
D.L. Williams
Keyword(s):  
2010 ◽  
Vol 426-427 ◽  
pp. 30-34
Author(s):  
Bing Kun Xiang ◽  
Dun Wen Zuo ◽  
Xiang Feng Li ◽  
Feng Xu ◽  
M. Wang

Boron-doped micro-nanocrystalline diamond coating may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. Along with the increase of doped-boron concentration in the film, two-point resistance measurement indicates that film resistance presents exponential decrease; Raman spectrum test shows that, the characteristic peak value of diamond 1332cm-1 in the spectrum moves toward low frequency, the semi-height width of diamond peak, peak D and peak G, etc. in the spectrum is expanded, and the component of non-diamond bonds such as sp2, etc. in the film is increased; SEM and AFM observation shows that, increasing the doped-boron concentration could further subdivide the crystal grains in the film, and is beneficial for the growth of nano- or ultra-nano-crystalline diamond film; film annealing test shows that, micro-nanocrystalline diamond film with higher doped-boron concentration has better thermal stability than the micro-nanocrystalline diamond film without doped boron.


1995 ◽  
Vol 416 ◽  
Author(s):  
F. Golshani ◽  
W. H. Miller ◽  
M. A. Prelas ◽  
T. Sung ◽  
G. Popovici ◽  
...  

ABSTRACTThe hydrogen content of free-standing polycrystalline CVD diamond samples was determined by Fourier Transform Infrared (FTIR) measurements and was quantified by a notched neutron spectrum technique. The latter measures the total bonded and unbonded hydrogen. The concentration of total hydrogen in these samples was of the same order of magnitude. The FTIR measurements, which are sensitive to the bonded hydrogen, indicated different hydrogen to diamond peak ratios.


1996 ◽  
Vol 424 ◽  
Author(s):  
J. Y. Shim ◽  
E. J. Chi ◽  
S. J. Rho ◽  
H. K. Baik

ABSTRACTThe field emission characteristics of the Si emitters and the diamond coated Si emitters are investigated. The Fowler-Nordheim plots of the two types of Si emitters show linear slopes. It means that the I-V characteristics follow the Fowler-Nordheim relation. Field emission for the two types of diamond coated Si emitters exhibits significant enhancement both in turn-on voltage and total emission current. The Raman spectrum shows that the high intensity graphite peak is observed with diamond peak and thereby large amounts of graphite may be included in the diamond grain boundary. It seems to be thought that the graphite participates in the low field emission. However, further investigations are needed to understand whether the graphite may enhance the emission characteristics of diamond or not.


1993 ◽  
Vol 317 ◽  
Author(s):  
M.M. Waitew ◽  
S. Ismat Shah

ABSTRACTDiamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.


2017 ◽  
Vol 68 (7) ◽  
pp. 3-9
Author(s):  
Kateřina Dragounová ◽  
Tibor Ižák ◽  
Alexander Kromka ◽  
Zdeněk Potůček ◽  
Zdeněk Bryknar ◽  
...  

AbstractNanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.


1994 ◽  
Vol 349 ◽  
Author(s):  
P. W. Morrison ◽  
A. Somashekhar ◽  
J. T. Glass ◽  
J. T. Prater

ABSTRACTThis research investigates the growth of diamond thin films using an enclosed oxyacetylene torch. Using statistical experimental design, we have systematically explored the parameter space to construct maps of nucleation density, film quality, and growth rate as functions of growth conditions. The deposition process is divided into nucleation enhancement and growth, and each step is optimized separately. In the study of the nucleation enhancement, we vary R = O2/C2H2, substrate-flame distance (z), and pretreatment time and determine the nucleation density and nucleation uniformity using electron microscopy. For the growth study, the variables are R, z, and substrate temperature, and we employ two different Raman scattering measurements to assess film quality. In one case, we determine a quality ratio β = diamond peak/(diamond peak + nondiamond peak); the second indicator is the luminescence determined from the baseline of the spectrum. In the growth study, the best film quality is comparable to the best films grown in an atmospheric flame in which R is cycled. We also find that the growth rate is a factor of 10 less than in the atmospheric flame.


2006 ◽  
Vol 956 ◽  
Author(s):  
Boqian Yang ◽  
Hongxin Zhang ◽  
Xinpeng Wang ◽  
Xianping Feng

ABSTRACTDiamond-like carbon (DLC) films were synthesized using pulsed plasma sputtering deposition techniques. Microscope and Raman scattering techniques were used to study the effects of bias voltages on the properties of diamond-like carbon films. With d.c. bias voltage up to 1000V, the smooth and thick DLC films together with a few nanoparticles were obtained. An increase of the d.c. bias voltage up to 2000V yielded thicker DLC films but its surface became slightly rough and size of particles became large. The crystalline properties of these particles were studied. A tiny diamond peak from Raman spectrum was also observed.


1989 ◽  
Vol 162 ◽  
Author(s):  
Y. M. LeGrice ◽  
R. J. Nemanich ◽  
J. T. Glass ◽  
Y. H. Lee ◽  
R. A Rudder ◽  
...  

ABSTRACTIn this study we develop a method which utilizes the linewidth of the diamond peak at 1332 cm−1 to determine the diamond domain sizes. We have carried out calculations based on the phonon dispersion curves of diamond and the breakdown of wavevector selection rules in Raman scattering. The linewidths of a series of diamond samples were calculated, and from this theory the dimensions of the diamond regions were obtained. The calculated domain sizes ranged from 57 to 100Å and were compared to values obtained from SEM micrographs which were between 5000 and 25000Å. This is consistent with other results which have found that domain sizes calculated from this theory are in general consistent with sizes determined from electrical conductivity measurements, not from microscopy techniques. In addition, this theory allows for the calculation of the amount of frequency shift due to microcrystallinity, so that the residual stress in the film can be found.


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