scholarly journals Effect of Ion Irradiation on ZnO Thin Film Prepared using RF Magnetron Sputtering

2015 ◽  
Vol 58 (9) ◽  
pp. 351-355
Author(s):  
Yosuke TAKIGUCHI ◽  
Hiroshi TOYOTA
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy

2010 ◽  
Vol 256 (21) ◽  
pp. 6350-6353 ◽  
Author(s):  
Tokiyoshi Matsuda ◽  
Mamoru Furuta ◽  
Takahiro Hiramatsu ◽  
Hiroshi Furuta ◽  
Chaoyang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Thermal Desorption ◽  
Thermal Desorption Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Thermal Stability Of

Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering

2008 ◽  
Vol 388 ◽  
pp. 19-22 ◽  
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Toshiyuki Suzuki ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Sapphire Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Excitation Light ◽  
Sapphire Substrates ◽  
Band Emission ◽  
Near Band Emission ◽  
Zno Crystal

Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low temperature. Some experimental results suggest that NBE depends on the polarization of the excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire substrate.

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