Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy

2010 ◽  
Vol 256 (21) ◽  
pp. 6350-6353 ◽  
Author(s):  
Tokiyoshi Matsuda ◽  
Mamoru Furuta ◽  
Takahiro Hiramatsu ◽  
Hiroshi Furuta ◽  
Chaoyang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Thermal Desorption ◽  
Thermal Desorption Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Thermal Stability Of

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

scholarly journals Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
High Thermal Stability ◽  
Tantalum Nitride ◽  
Reactive Magnetron ◽  
Microwave Photonic ◽  
Thin Film Resistors ◽  
Thermal Stability Of

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering

2008 ◽  
Vol 388 ◽  
pp. 19-22 ◽  
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Toshiyuki Suzuki ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Sapphire Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Excitation Light ◽  
Sapphire Substrates ◽  
Band Emission ◽  
Near Band Emission ◽  
Zno Crystal

Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low temperature. Some experimental results suggest that NBE depends on the polarization of the excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire substrate.

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