Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering

Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low temperature. Some experimental results suggest that NBE depends on the polarization of the excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire substrate.

Raman Scattering and Photoluminescence Studies of Zn1-xMnxO Nanowires via Vapor Phase Growth

In this paper, we investigated the Raman scattering and photoluminescence of Zn1-xMnxO nanowires synthesized by the vapor phase growth. The changes of E2(High) and A1(LO) phonon frequency in Raman spectra indicate that the tensile stress increases while the free carrier concentration decreases with the increase of manganese. The Raman spectra exited by the different lasers exhibit the quantum confinement effect of Zn1-xMnxO nanowires. The photoluminescence spectra reveal that the near band emission is affected by the content of manganese obviously. The values of IUV/G decrease distinctly with the manganese increase also demonstrate that more stress introduced with the more substitution of Mn for Zn.