scholarly journals Equilibrium Concentration of Point Defects under Various Stages in Growing Silicon Crystal.

Shinku ◽  
2000 ◽  
Vol 43 (3) ◽  
pp. 205-208
Author(s):  
Katsuto TANAHASHI ◽  
Michimasa KIKUCHI ◽  
Naohisa INOUE ◽  
Yusuke MIZOKAWA
Keyword(s):  
Point Defects ◽  
Silicon Crystal ◽  
Equilibrium Concentration

Equilibrium concentration of point defects in crystalline4He at O K

1995 ◽  
Vol 78 (1-2) ◽  
pp. 117-134 ◽  
Author(s):  
Jennifer A. Hodgdon ◽  
Frank H. Stillinger
Keyword(s):  
Point Defects ◽  
Equilibrium Concentration

Intrinsic Point Defects in Silicon Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 3-14 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Vacancy Concentration ◽  
Silicon Crystal ◽  
Growth Conditions ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Low Concentrations ◽  
Different Populations ◽  
Vacancy Concentrations

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

scholarly journals Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

2011 ◽  
Vol 75 (12) ◽  
pp. 657-664 ◽  
Author(s):  
Manabu Nishimoto ◽  
Kozo Nakamura ◽  
Masataka Hourai ◽  
Toshiaki Ono ◽  
Wataru Sugimura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Physical Properties ◽  
High Precision ◽  
Point Defects ◽  
Silicon Crystal ◽  
Thermal Simulations

Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Concentration of point defects changed by thermal stress in growing CZ silicon crystal: effect of the growth rate

2000 ◽  
Vol 210 (1-3) ◽  
pp. 45-48 ◽  
Author(s):  
K Tanahashi ◽  
M Kikuchi ◽  
T Higashino ◽  
N Inoue ◽  
Y Mizokawa
Keyword(s):  
Growth Rate ◽  
Thermal Stress ◽  
Point Defects ◽  
Silicon Crystal

Point defects generated by oxidation of silicon crystal surface

2009 ◽  
Vol 404 (23-24) ◽  
pp. 5156-5158 ◽  
Author(s):  
M. Suezawa ◽  
Y. Yamamoto ◽  
M. Suemitsu ◽  
I. Yonenaga
Keyword(s):  
Point Defects ◽  
Crystal Surface ◽  
Silicon Crystal

The Effect of Vacancies Grown into Silicon on Gold Diffusion

1992 ◽  
Vol 262 ◽  
Author(s):  
R. K. Graupner ◽  
J. A. Van Vechten ◽  
P. Harwood ◽  
T. K. Monson
Keyword(s):  
Point Defects ◽  
Silicon Crystal ◽  
Silicon Surfaces ◽  
Vacuum System ◽  
Float Zone ◽  
Diffusion Temperature ◽  
High Concentrations ◽  
Gold Diffusion ◽  
Silicon Based ◽  
High Degree

ABSTRACTWe propose a generalized model for gold diffusion in silicon based on the effect of the high concentrations of vacancies and vacancy complexes in the as-grown silicon. The monovacancy profiles calculated using this model are identical to the substitutional gold profiles calculated using the kick-out model. We deposited Au on commercial float zone Si in a vacuum system after the Si had reached the diffusion temperature (1233 K) and had been annealed in various ways. Contrary to previously published reports, we find the electrically active Au with a nearly one-sided profile when the Au is deposited on samples which were preannealed in vacuum. We conclude that annealed silicon surfaces lack the imperfections needed to make them effective sources or sinks for vacancies or self-interstitials. We propose that this can cause a high degree of supersaturation in the as-grown silicon crystal since the point defects cannot annihilate at the surfaces to maintain equilibrium as the crystal is cooled.

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