Equilibrium concentration of point defects in crystalline4He at O K

1995 ◽  
Vol 78 (1-2) ◽  
pp. 117-134 ◽  
Author(s):  
Jennifer A. Hodgdon ◽  
Frank H. Stillinger
Keyword(s):  
Point Defects ◽  
Equilibrium Concentration

Thermodynamics of defect subsystem in zinc telluride crystals

2016 ◽  
Vol 30 (16) ◽  
pp. 1650172 ◽  
Author(s):  
I. V. Horichok ◽  
L. I. Nykyruy ◽  
T. O. Parashchuk ◽  
S. D. Bardashevska ◽  
M. P. Pylyponuk
Keyword(s):  
Vapor Pressure ◽  
Point Defects ◽  
Thermodynamic Potential ◽  
Annealing Temperature ◽  
Equilibrium Concentration ◽  
Zinc Telluride ◽  
Charge Carriers ◽  
Free Charge ◽  
Technological Factors ◽  
Two Temperature

Using method on the base of minimizing of thermodynamic potential in “crystal-vapor” system as a function of defect concentration the equilibrium concentration of point defects and free charge carriers in zinc telluride (ZnTe) crystals have been calculated depending on the technological factors of two-temperature annealing (annealing temperature [Formula: see text] and vapor pressure [Formula: see text] of zinc or [Formula: see text] of tellurium). It is shown that the dominant defects are zinc vacancies the charge state of which depends on the technological conditions of annealing.

scholarly journals Equilibrium Concentration of Point Defects under Various Stages in Growing Silicon Crystal.

Shinku ◽  
2000 ◽  
Vol 43 (3) ◽  
pp. 205-208
Author(s):  
Katsuto TANAHASHI ◽  
Michimasa KIKUCHI ◽  
Naohisa INOUE ◽  
Yusuke MIZOKAWA
Keyword(s):  
Point Defects ◽  
Silicon Crystal ◽  
Equilibrium Concentration

Intrinsic Point Defects and Diffusion Processes in Silicon

1983 ◽  
Vol 31 ◽  
Author(s):  
T. Y. Tan
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Diffusion Processes ◽  
Equilibrium Concentration ◽  
Surface Oxidation ◽  
Self Diffusion ◽  
Equilibrium Concentrations ◽  
And Diffusion

ABSTRACTThis paper reviews recent progress in understanding the role of vacancies (V) and self-interstitials (I) in self and impurity diffusion in Si. Surface oxidation perturbs the thermal equilibrium concentration of point defects and analyses of the resulting effects on dopant diffusion showed that both V and I are present. Developments in experimental and theoretical works on Au diffusion in Si yielded a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. It is hoped that the I and V thermal equilibrium concentrations may be determined in the near future.A number of important physical aspects of the anomalous diffusion of P are now understood but a basically satisfactory model may need further work.

Equilibrium concentration of point defects in sodium metal

1964 ◽  
Vol 9 (2) ◽  
pp. 89-90 ◽  
Author(s):  
G.A. Sullivan ◽  
J.W. Weymouth
Keyword(s):  
Point Defects ◽  
Equilibrium Concentration ◽  
Sodium Metal

Effects of Compression Tests on Point Defects in Pure Ni and Ni-16wt%Cr Model Alloys

2015 ◽  
Vol 363 ◽  
pp. 202-209
Author(s):  
Patrick Ganster ◽  
A. Borbely ◽  
V. Barnier ◽  
Pierre Desgardin ◽  
M.F. Barthe ◽  
...  
Keyword(s):  
Point Defects ◽  
Equilibrium Concentration ◽  
Positron Annihilation Spectroscopy ◽  
Compression Tests ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Deformation ◽  
Dislocation Interactions ◽  
Kinetics Of ◽  
Defect Densities

On Ni and Ni-16wt%.Cr model-alloys compressed at 30 % and 60 % deformation, point-defects and dislocations concentrations are respectively characterized by positron annihilation spectroscopy and x-ray diffraction analysis. The positron results show that only mono-vacancies are formed during compressive test The X-ray results allows us to quantify the dislocation concentration in the systems. Saturation of defect densities is observed in measurements for these high deformation rates. In support to the experimental work, an homogeneous kinetic model is used to characterize point-defect – dislocation interactions to estimate the kinetics of vacancy restoration to equilibrium concentration.

Boron Diffusion in Si1−x Gex Strained Layers

1992 ◽  
Vol 281 ◽  
Author(s):  
N. Moriya ◽  
C. A. King ◽  
L. C. Feldman ◽  
H. S. Luftman ◽  
M. L. Green ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Point Defects ◽  
Annealing Temperature ◽  
Equilibrium Concentration ◽  
Boron Diffusion ◽  
Strained Layers ◽  
New Approach ◽  
Charged Point Defect ◽  
Charged Point ◽  
Control Samples

ABSTRACTBoron diffusion in Sia7 Gea3 strained layers has been studied as a function of annealing temperature and is compared to boron diffusion in unstrained Si epitaxial layers. A lower diffusivity was observed in Sia7 Gea3 strained layers as compared to the Si control samples. Using the well-accepted model for boron diffusion via charged point defects in Si, the intrinsic diffusivities of the boron atoms in the Sia7 Gea3 layers were derived and an activation energy of 4.4 eV was estimated for the diffusion process.A new approach to describe the diffusion process is also presented here. In this model, we relate the lower diffusivity to a corresponding change in the charged point defect equilibrium concentration caused by a change in band-gap due to the strain and the existence of foreign atoms in a Si matrix.

Microstructural Evolution in Reduced TiO2

1981 ◽  
Vol 39 ◽  
pp. 74-75
Author(s):  
W. T. Donlon ◽  
S. Shinozaki ◽  
E. M. Logothetis ◽  
W. Kaizer
Keyword(s):  
Microstructural Evolution ◽  
Point Defects ◽  
Extended Defects ◽  
Small Deviations ◽  
Controlled Atmospheres ◽  
Limited Solubility ◽  
Thin Foils ◽  
Heat Treated ◽  
Porous Polycrystalline ◽  
Crystallographic Shear

Since point defects have a limited solubility in the rutile (TiO2) lattice, small deviations from stoichiometry are known to produce crystallographic shear (CS) planes which accomodate local variations in composition. The material used in this study was porous polycrystalline TiO2 (60% dense), in the form of 3mm. diameter disks, 1mm thick. Samples were mechanically polished, ion-milled by conventional techniques, and initially examined with the use of a Siemens EM102. The electron transparent thin foils were then heat-treated under controlled atmospheres of CO/CO2 and H2 and reexamined in the same manner.The “as-received” material contained mostly TiO2 grains (∼5μm diameter) which had no extended defects. Several grains however, aid exhibit a structure similar to micro-twinned grains observed in reduced rutile. Lattice fringe images (Fig. 1) of these grains reveal that the adjoining layers are not simply twin related variants of a single TinO2n-1 compound. Rather these layers (100 - 250 Å wide) are alternately comprised of stoichiometric TiO2 (rutile) and reduced TiO2 in the form of Ti8O15, with the Ti8O15 layers on either side of the TiO2 being twin related.

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