scholarly journals Thermoelectric Conversion. III. Effects of Pd and Pt double doping on thermoelectric properties of CoSb3.

1997 ◽  
Vol 9 (3/4) ◽  
pp. 177-179
Author(s):  
Hiroaki ANNO ◽  
Kakuei MATSUBARA ◽  
Yasuhiro NOTOHARA ◽  
Tsutomu SAKAKIBARA ◽  
Hirofumi TASHIRO
2011 ◽  
Vol 695 ◽  
pp. 65-68 ◽  
Author(s):  
Kwan Ho Park ◽  
Il Ho Kim

Co4-xFexSb12-ySny skutterudites were synthesized by mechanical alloying and hot pressing, and thermoelectric properties were examined. The carrier concentration increased by doping and thereby the electrical conductivity increased compared with intrinsic CoSb3. Every specimen had a positive Seebeck coefficient. Fe doping caused a decrease in the Seebeck coefficient but it could be enhanced by Fe/Sn double doping possibly due to charge compensation. The thermal conductivity was desirably very low and this originated from ionized impurity-phonon scattering. Thermoelectric properties were improved remarkably by Fe/Sn doping, and a maximum figure of merit, ZT = 0.5 was obtained at 723 K in the Co3FeSb11.2Sn0.8 specimen.


Author(s):  
Robert Freer ◽  
Dursun Ekren ◽  
Tanmoy Ghosh ◽  
Kanishka Biswas ◽  
Pengfei Qiu ◽  
...  

Abstract This paper presents tables of key thermoelectric properties, which define thermoelectric conversion efficiency, for a wide range of inorganic materials. The 12 families of materials included in these tables are primarily selected on the basis of well established, internationally-recognised performance and their promise for current and future applications: Tellurides, Skutterudites, Half Heuslers, Zintls, Mg-Sb Antimonides, Clathrates, FeGa3–type materials, Actinides and Lanthanides, Oxides, Sulfides, Selenides, Silicides, Borides and Carbides. As thermoelectric properties vary with temperature, data are presented at room temperature to enable ready comparison, and also at a higher temperature appropriate to peak performance. An individual table of data and commentary are provided for each family of materials plus source references for all the data.


2013 ◽  
Vol 743-744 ◽  
pp. 138-143 ◽  
Author(s):  
Zhuang Hao Zheng ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Peng Juan Liu ◽  
Peng Ju Cao ◽  
...  

Significant progress has been made in thermoelectric materials during the last decades and it is found that thermoelectric thin film materials have high thermoelectric conversion efficiency. ZnO based thermoelectric materials, such as ZnO:Al (AZO), are considered as the most promising oxide materials for high-temperature, nontoxic and low-cost thermoelectric application. In this work, the effects of annealing temperature on the thermoelectric properties of AZO thin films prepared by direct current magnetron sputtering were investigated. The results indicate that the Seebeck coefficient of AZO thin films increases and the resistivity decreases as increasing of annealing temperature. Among the prepared AZO films in this work, the maximum absolute value of Seebeck coefficient is 460 μV/K and the minimum resistivity is 3.25×10-4 Ω·m. The sample annealed at 773 K has a maximum power factor value of 1.46×10-4 W/mK2 at 620 K with a moderate Seebeck coefficient of-355 μV/K and a electrical conductivity of 1.16×103 S/m.


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