scholarly journals Thermoelectric Conversion. III. Preparation and thermoelectric properties of peltier cooling modules by printing processes.

1997 ◽  
Vol 9 (3/4) ◽  
pp. 183-187 ◽  
Author(s):  
Itaru SHIBATA ◽  
Toshikazu NISHIDE
Author(s):  
Robert Freer ◽  
Dursun Ekren ◽  
Tanmoy Ghosh ◽  
Kanishka Biswas ◽  
Pengfei Qiu ◽  
...  

Abstract This paper presents tables of key thermoelectric properties, which define thermoelectric conversion efficiency, for a wide range of inorganic materials. The 12 families of materials included in these tables are primarily selected on the basis of well established, internationally-recognised performance and their promise for current and future applications: Tellurides, Skutterudites, Half Heuslers, Zintls, Mg-Sb Antimonides, Clathrates, FeGa3–type materials, Actinides and Lanthanides, Oxides, Sulfides, Selenides, Silicides, Borides and Carbides. As thermoelectric properties vary with temperature, data are presented at room temperature to enable ready comparison, and also at a higher temperature appropriate to peak performance. An individual table of data and commentary are provided for each family of materials plus source references for all the data.


1997 ◽  
Vol 9 (3/4) ◽  
pp. 177-179
Author(s):  
Hiroaki ANNO ◽  
Kakuei MATSUBARA ◽  
Yasuhiro NOTOHARA ◽  
Tsutomu SAKAKIBARA ◽  
Hirofumi TASHIRO

2013 ◽  
Vol 743-744 ◽  
pp. 138-143 ◽  
Author(s):  
Zhuang Hao Zheng ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Peng Juan Liu ◽  
Peng Ju Cao ◽  
...  

Significant progress has been made in thermoelectric materials during the last decades and it is found that thermoelectric thin film materials have high thermoelectric conversion efficiency. ZnO based thermoelectric materials, such as ZnO:Al (AZO), are considered as the most promising oxide materials for high-temperature, nontoxic and low-cost thermoelectric application. In this work, the effects of annealing temperature on the thermoelectric properties of AZO thin films prepared by direct current magnetron sputtering were investigated. The results indicate that the Seebeck coefficient of AZO thin films increases and the resistivity decreases as increasing of annealing temperature. Among the prepared AZO films in this work, the maximum absolute value of Seebeck coefficient is 460 μV/K and the minimum resistivity is 3.25×10-4 Ω·m. The sample annealed at 773 K has a maximum power factor value of 1.46×10-4 W/mK2 at 620 K with a moderate Seebeck coefficient of-355 μV/K and a electrical conductivity of 1.16×103 S/m.


2019 ◽  
Vol 21 (10) ◽  
pp. 5679-5688 ◽  
Author(s):  
Zahid Rashid ◽  
Arun S. Nissimagoudar ◽  
Wu Li

Confinement or dimensionality reduction is a novel strategy to reduce the lattice thermal conductivity and, consequently, to improve the thermoelectric conversion performance.


2010 ◽  
Vol 658 ◽  
pp. 33-36 ◽  
Author(s):  
Il Ho Kim ◽  
Joon Chul Kwon ◽  
Young Geun Lee ◽  
Man Soon Yoon ◽  
Sung Lim Ryu ◽  
...  

Recent search for novel thermoelectric materials has revealed a new class of compounds with half-Heusler structure as good candidates for higher performance thermoelectric conversion [1-2], since the structure was first found [3]. The unit cell of the half-Heusler with a space group F4¯ 3m consists of 4 interpenetrating cubic lattices. The crystallographic sites (0,0,0) and (1/4, 1/4, 1/4) are occupied by two different transition metals, the (1/2, 1/2, 1/2) site is occupied by Sn, Sb, or Bi, and the site (3/4, 3/4, 3/4) is empty [4,5]. Candidates with this structure for the investigation would be categorized into the combination of (Ti/Zr/Hf)(Co/Ni/Pt)(Sb/Sn/Bi) [4-6].


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