Optimize BJT for Small Dimensions and High-Frequency Analysis
Keyword(s):
In this paper, we have designed Bipolar junction transistor (BJT) structure for small dimensions that are (given by SCL Chandigarh) and high-frequency analysis. The material used is pure Si material no compounds such as SiGe, SiC is used. This transistor is examined by various effect of parameter variations such as doping, height, length through simulations. In this paper, we have optimized the small BJT at higher beta (β) 96.50 dB, and high- frequencies ft 8.64 GHz and fmax 21.51 GHz using pure Si material.
2020 ◽
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