scholarly journals Efficient, High Power Density, Modular Wide Band-gap Based Converters for Medium Voltage Application

2020 ◽  
Author(s):  
Hadi Moradisizkoohi
Processes ◽  
2021 ◽  
Vol 9 (10) ◽  
pp. 1750
Author(s):  
Deepa Guragain ◽  
Romakanta Bhattarai ◽  
Jonghyun Choi ◽  
Wang Lin ◽  
Ram Krishna Gupta ◽  
...  

For electrochemical supercapacitors, nickel cobaltite (NiCo2O4) has emerged as a new energy storage material. The electrocapacitive performance of metal oxides is significantly influenced by their morphology and electrical characteristics. The synthesis route can modulate the morphological structure, while their energy band gaps and defects can vary the electrical properties. In addition to modifying the energy band gap, doping can improve crystal stability and refine grain size, providing much-needed surface area for high specific capacitance. This study evaluates the electrochemical performance of aluminum-doped Ni1−xAlxCo2O4 (0 ≤ x ≤ 0.8) compounds. The Ni1−xAlxCo2O4 samples were synthesized through a hydrothermal method by varying the Al to Ni molar ratio. The physical, morphological, and electrochemical properties of Ni1−xAlxCo2O4 are observed to vary with Al3+ content. A morphological change from urchin-like spheres to nanoplate-like structures with a concomitant increase in the surface area, reaching up to 189 m2/g for x = 0.8, was observed with increasing Al3+ content in Ni1−xAlxCo2O4. The electrochemical performance of Ni1−xAlxCo2O4 as an electrode was assessed in a 3M KOH solution. The high specific capacitance of 512 F/g at a 2 mV/s scan rate, 268 F/g at a current density of 0.5 A/g, and energy density of 12.4 Wh/kg was observed for the x = 0.0 sample, which was reduced upon further Al3+ substitution. The as-synthesized Ni1−xAlxCo2O4 electrode exhibited a maximum energy density of 12.4 W h kg−1 with an outstanding high-power density of approximately 6316.6 W h kg−1 for x = 0.0 and an energy density of 8.7 W h kg−1 with an outstanding high-power density of approximately 6670.9 W h kg−1 for x = 0.6. The capacitance retention of 97% and 108.52% and the Coulombic efficiency of 100% and 99.24% were observed for x = 0.0 and x = 0.8, respectively. First-principles density functional theory (DFT) calculations show that the band-gap energy of Ni1−xAlxCo2O4 remained largely invariant with the Al3+ substitution for low Al3+ content. Although the capacitance performance is reduced upon Al3+ doping, overall, the Al3+ doped Ni1−xAlxCo2O4 displayed good energy, powder density, and retention performance. Thus, Al3+ could be a cost-effective alternative in replacing Ni with the performance trade off.


2010 ◽  
Vol 645-648 ◽  
pp. 1101-1106 ◽  
Author(s):  
Jürgen Biela ◽  
Mario Schweizer ◽  
Stefan Waffler ◽  
Benjamin Wrzecionko ◽  
Johann Walter Kolar

Switching devices based on wide band gap materials as SiC oer a signicant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.


Machines ◽  
2021 ◽  
Vol 9 (12) ◽  
pp. 350
Author(s):  
Niklas Langmaack ◽  
Florian Lippold ◽  
Daiyi Hu ◽  
Regine Mallwitz

Within the project ‘ARIEL’ an electrical turbo compressor unit for fuel cell applications is deeply investigated. The necessary drive inverter is especially designed for high fundamental frequency and high switching frequency to cope with the requirements of the implemented electrical machine. This paper presents investigations on the inverter’s efficiency and its prospective lifetime at different stages of the development. In the design process different wide band gap power semiconductor devices in discrete packages are evaluated in terms of the achievable power density and efficiency, both by simulations and measurements. Finally, an optimised design using surface mount silicon carbide MOSFETs is developed. Compared to a former inverter design using silicon devices in a three-level topology, the power density of the inverter is significantly increased. The lifetime of power electronic systems is often limited by the lifetime of the power semiconductor devices. Based on loss calculations and the resulting temperature swing of the virtual junction the lifetime of the inverter is estimated for the most frequent operating points and for different mission profiles.


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