scholarly journals A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

2018 ◽  
Vol 1 ◽  
pp. 657-662
Author(s):  
L. Fan ◽  
◽  
A. Knott ◽  
I. Jørgensen
Keyword(s):  
Band Gap ◽  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Wide Band ◽  
Power Converter ◽  
Switched Capacitor ◽  
High Power Density ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

scholarly journals Modelling and analysis of vienna rectifier for more electric aircraft applications using wide band-gap materials

2021 ◽  
Vol 2120 (1) ◽  
pp. 012027
Author(s):  
Ling Jin Loong ◽  
Chockalingam Aravind Vaithilingam ◽  
Gowthamraj Rajendran ◽  
Venkatkumar Muneeswaran
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Wide Band ◽  
Wide Bandgap ◽  
High Power Density ◽  
Vienna Rectifier ◽  
Electric Aircraft ◽  
Aircraft Application ◽  
More Electric Aircraft

Abstract This paper presents a comprehensive study on the switching effects of wide bandgap devices and the importance of power electronics in an aircraft application. Silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) are wide bandgap devices that act as a power electronic switch in the AC-DC converter for More Electric Aircraft (MEA) applications. Therefore, it is important to observe their converting efficiency to identify the most suitable wide bandgap device among three devices for AC-DC converters in aircraft applications to provide high efficiency and high-power density. In this study, the characteristics of Si, SIC, and GaN devices are simulated using PSIM software. Also, this paper presents the performance of the Vienna rectifier for aircraft application. The Vienna rectifier using Si, SiC, and GaN devices are simulated using PSIM software for aircraft application. GaN with Vienna rectifier provides better performance than Si and SiC devices for aircraft applications among the three devices. It gives high efficiency, high power density, low input current THD to meet IEEE-519 standard, and high-power factor at mains.

scholarly journals Hybrid Multimodule DC-DC Converters for Ultrafast Electric Vehicle Chargers

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4949
Author(s):  
Mena ElMenshawy ◽  
Ahmed Massoud
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Controller Design ◽  
Power Level ◽  
Power Converter ◽  
Total Power ◽  
Switching Frequency ◽  
High Power Density ◽  
High Switching Frequency

To increase the adoption of electric vehicles (EVs), significant efforts in terms of reducing the charging time are required. Consequently, ultrafast charging (UFC) stations require extensive investigation, particularly considering their higher power level requirements. Accordingly, this paper introduces a hybrid multimodule DC-DC converter-based dual-active bridge (DAB) topology for EV-UFC to achieve high-efficiency and high-power density. The hybrid concept is achieved through employing two different groups of multimodule converters. The first is designed to be in charge of a high fraction of the total required power, operating at a relatively low switching frequency, while the second is designed for a small fraction of the total power, operating at a relatively high switching frequency. To support the power converter controller design, a generalized small-signal model for the hybrid converter is studied. Also, cross feedback output current sharing (CFOCS) control for the hybrid input-series output-parallel (ISOP) converters is examined to ensure uniform power-sharing and ensure the desired fraction of power handled by each multimodule group. The control scheme for a hybrid eight-module ISOP converter of 200 kW is investigated using a reflex charging scheme. The power loss analysis of the hybrid converter is provided and compared to conventional multimodule DC-DC converters. It has been shown that the presented converter can achieve both high efficiency (99.6%) and high power density (10.3 kW/L), compromising between the two other conventional converters. Simulation results are provided using the MatLab/Simulink software to elucidate the presented concept considering parameter mismatches.

FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS

2011 ◽  
Vol 25 (02) ◽  
pp. 77-88 ◽  
Author(s):  
H. J. QUAH ◽  
K. Y. CHEONG ◽  
Z. HASSAN
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
High Power ◽  
Gate Dielectric ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
High Dielectric ◽  
Hostile Environments

Recent advances in silicon technology have pushed the silicon properties to its theoretical limits. Therefore, wide band gap semiconductors, such as silicon carbide ( SiC ) and gallium nitride ( GaN ) have been considered as a replacement for silicon. The discovery of these wide band gap semiconductors have given the new generation power devices a magnificent prospect of surviving under high temperature and hostile environments. The primary focuses of this review are the properties of GaN , the alternative substrates that can be used to deposit GaN and the substitution of SiO 2 gate dielectric with high dielectric constant (k) film. The future perspectives of AlGaN / GaN heterostructures are also discussed, providing that these structures are able to further enhance the performance of high power devices.

scholarly journals Near-field thermophotovoltaics for efficient heat to electricity conversion at high power density

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Near Field ◽  
Electrical Power ◽  
Photovoltaic Cells ◽  
High Power Density ◽  
Pv Cell ◽  
Electrical Power Output ◽  
Power Densities

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.

High-Efficiency Lead-Free Wide Band Gap Perovskite Solar Cells via Guanidinium Bromide Incorporation

2021 ◽  
Author(s):  
Mengmeng Chen ◽  
Muhammad Akmal Kamarudin ◽  
Ajay K. Baranwal ◽  
Gaurav Kapil ◽  
Teresa S. Ripolles ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Lead Free ◽  
Wide Band Gap

High-Power-Density High-Efficiency Bottom-Emitting Vertical-Cavity Surface-Emitting Laser Array

2011 ◽  
Vol 4 (5) ◽  
pp. 052104 ◽  
Author(s):  
Di Liu ◽  
Yongqiang Ning ◽  
Yugang Zeng ◽  
Li Qin ◽  
Yun Liu ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Cavity Surface ◽  
High Power Density ◽  
Laser Array ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type
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