Laser-induced fluorescence diagnostics for xenon Hall thrusters

Author(s):  
R. Cedolin ◽  
W. Hargus ◽  
R. Hanson ◽  
M. Cappelli
1996 ◽  
Author(s):  
Claes af Klinteberg ◽  
Annika M. Nilsson ◽  
Ingrid Wang-Nordman ◽  
Stefan Andersson-Engels ◽  
Sune Svanberg ◽  
...  

1982 ◽  
Vol 17 ◽  
Author(s):  
S. Pang ◽  
S. R. J. Brueck

ABSTRACTLaser-induced fluorescence experiments have been carried out during CF4/O2/H2 plasma etching of Si and SiO2. Measurements of relative CF2 radical concentrations as a function of rf power, frequency, pressure, and gas composition are reported. The results are correlated with etch rates of Si and SiO2. The balance between CF2 and F concentrations is shown to influence the etching process strongly.


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