Laser-Induced Fluorescence Diagnostics of CF4/O2/H2 Plasma Etching

1982 ◽  
Vol 17 ◽  
Author(s):  
S. Pang ◽  
S. R. J. Brueck
Keyword(s):  
Plasma Etching ◽  
Laser Induced Fluorescence ◽  
Etching Process ◽  
Gas Composition ◽  
Rf Power ◽  
Fluorescence Diagnostics ◽  
Power Frequency ◽  
Etch Rates

ABSTRACTLaser-induced fluorescence experiments have been carried out during CF4/O2/H2 plasma etching of Si and SiO2. Measurements of relative CF2 radical concentrations as a function of rf power, frequency, pressure, and gas composition are reported. The results are correlated with etch rates of Si and SiO2. The balance between CF2 and F concentrations is shown to influence the etching process strongly.

scholarly journals ICP Dry Etching of III-V Nitrides

1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Dc Bias ◽  
Etch Rates ◽  
Icp Dry Etching

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures

2014 ◽  
Vol 778-780 ◽  
pp. 730-733
Author(s):  
Lars Hiller ◽  
Thomas Stauden ◽  
Ricarda M. Kemper ◽  
Jörg K.N. Lindner ◽  
Donat J. As ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Side Wall ◽  
Etching Process ◽  
Gas Composition ◽  
Applied Bias ◽  
Hydrogen Addition ◽  
Ecr Plasma ◽  
Aspect Ratios ◽  
Wall Slope

An anisotropic etching process for mesa structures using fluorinated plasma with hydrogen addition was developed in an electon cyclotron resonance setup. The evolution of the mesa morphology was studied in dependence on the gas composition, the applied bias and the pressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios of the fabricated structure in the developed residue free ECR plasma etching process were between 5 and 20.

Silicon Micro-Channel Definition via ICP-RIE Plasma Etching Process Using Different Aluminum Hardmasks

2021 ◽  
pp. 1-7
Author(s):  
Hugo S. Alvarez ◽  
Frederico H. Cioldin ◽  
Audrey R. Silva ◽  
Luana C. J. Espinola ◽  
Alfredo R. Vaz ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Micro Channel ◽  
Plasma Etching Process

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma
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