Rarefied-Flow Transition Regime Orbiter Aerodynamic Acceleration Flight Measurements

1997 ◽  
Vol 34 (1) ◽  
pp. 8-15 ◽  
Author(s):  
Robert C. Blanchard ◽  
Richard G. Wilmoth ◽  
Gerald J. LeBeau
1986 ◽  
Vol 23 (1) ◽  
pp. 18-24 ◽  
Author(s):  
Robert C. Blanchard ◽  
Gregory M. Buck

1997 ◽  
Vol 34 (5) ◽  
pp. 687-690 ◽  
Author(s):  
Robert C. Blanchard ◽  
Richard G. Wilmoth ◽  
James N. Moss

2002 ◽  
Vol 715 ◽  
Author(s):  
N. Wyrsch ◽  
C. Droz ◽  
L. Feitknecht ◽  
J. Spitznagel ◽  
A. Shah

AbstractUndoped microcrystalline silicon samples deposited in the transition regime between amorphous and microcrystalline growth have been investigated by dark conductivity measurement and Raman spectroscopy. From the latter, a semi-quantitative crystalline volume fraction Xc of the sample was deduced and correlated with dark conductivity data in order to reveal possible percolation controlled transport. No threshold was observed around the critical crystalline fraction value Xc of 33%, as reported previously, but a threshold in conductivity data was found at Xc≈50%. This threshold is interpreted here speculatively as being the result of postoxidation, and not constituting an actual percolation threshold.


1998 ◽  
Author(s):  
B. Wood ◽  
D. Hall ◽  
J. Lesho ◽  
M. Boies ◽  
D. Silver ◽  
...  
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