scholarly journals Length Scaling in Spacecraft Dynamics

2011 ◽  
Vol 34 (1) ◽  
pp. 231-246 ◽  
Author(s):  
Justin A. Atchison ◽  
Mason A. Peck
Keyword(s):  
Spacecraft Dynamics ◽  
Length Scaling

Spacecraft Dynamics in the Vicinity of a Comet

2002 ◽  
Vol 50 (1) ◽  
pp. 35-52 ◽  
Author(s):  
D. J. Scheeres ◽  
F. Marzari
Keyword(s):  
Spacecraft Dynamics

scholarly journals Spatially Coupled Generalized LDPC Codes: Asymptotic Analysis and Finite Length Scaling

2021 ◽  
pp. 1-1
Author(s):  
David G. M. Mitchell ◽  
Pablo M. Olmos ◽  
Michael Lentmaier ◽  
Daniel J. Costello
Keyword(s):  
Asymptotic Analysis ◽  
Finite Length ◽  
Ldpc Codes ◽  
Length Scaling

Heavy traffic queue length scaling in switches with reconfiguration delay

2021 ◽  
Author(s):  
Chang-Heng Wang ◽  
Siva Theja Maguluri ◽  
Tara Javidi
Keyword(s):  
Queue Length ◽  
Heavy Traffic ◽  
Length Scaling

Gain-length scaling in quantum dot/quantum well infrared photodetectors

2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Gain Length ◽  
Length Scaling

scholarly journals Observation of direction instability in a fiber ring laser

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Muhammad Assad Arshad ◽  
Alexander Hartung ◽  
Arni Candra Pratiwi ◽  
Matthias Jäger
Keyword(s):  
Pump Power ◽  
Ring Laser ◽  
Instability Threshold ◽  
Fiber Ring Laser ◽  
Fiber Ring ◽  
Pump Power Threshold ◽  
Power Threshold ◽  
Length Scaling

AbstractWe report on the observation of a new phenomenon occurring in a fiber ring laser. This phenomenon is about the transition from an initially bidirectional emission of a reciprocal fiber ring laser to a unidirectional emission at a certain pump power threshold. In addition, the final direction is not predefined but appears to be randomly chosen every time the threshold is exceeded. Therefore, we term this new phenomenon direction instability. Furthermore, we provide a first discussion of how the instability threshold is influenced by the length and the loss of the cavity. We show that the threshold follows a power times length scaling, indicating a nonlinear origin.

SILICON ON RAISED INSULATOR FIELD EFFECT DIODE (SORI-FED) FOR ALLEVIATING SCALING PROBLEM IN FED

2014 ◽  
Vol 28 (05) ◽  
pp. 1450038 ◽  
Author(s):  
MAHDI VADIZADEH ◽  
MORTEZA FATHIPOUR ◽  
GHAFAR DARVISH
Keyword(s):  
Delay Time ◽  
Field Effect ◽  
Channel Length ◽  
Gate Delay ◽  
Electrical Characteristics ◽  
Band To Band Tunneling ◽  
Main Components ◽  
Channel Lengths ◽  
Length Scaling ◽  
The Impact

One of the main shortcomings in a field effect diode (FED) is its scaling. Use of an oxide layer in the channel is proposed to enhance the control of the gate on the channel carriers. This is the so-called silicon on raised insulator FED (SORI-FFD) structure. The Shockley–Read–Hall (SRH) mechanism is one of the main components of leakage current in FED devices. The potential induced by the gates in the OFF-state of a SORI-FFD, is larger than that induced by the gates of a regular FED. This reduces, SRH recombination rate. Hence, OFF-state characteristics of the SORI-FED device improves. We evaluate the impact of band-to-band tunneling (BTBT) on the electrical characteristics of Modified FED (M-FED).We show that for channel lengths of 35 nm and lower this device does not turn off. While, the proposed structure makes device channel length scaling possible down to 15 nm. We will also compare electrical characteristics of SORI-FED and M-FED using three metrics: gate delay time versus channel length, gate delay time versus I ON /I OFF ratio and energy-delay product versus channel length. Benchmarking results show the proposed FED structure provides improvement in I ON /I OFF ratio and holds promise for future logic transistor applications.

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