Raman Scattering Characterization of Transparent Thin Film for Thermal Conductivity Measurement

2009 ◽  
Vol 23 (3) ◽  
pp. 616-621 ◽  
Author(s):  
Shuo Huang ◽  
Xiaodong Ruan ◽  
Jun Zou ◽  
Xin Fu ◽  
Huayong Yang
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Raman Scattering ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement

Evaluation of Thermal Characterization Techniques and Tools for Thermal Conductivity Measurement of Sub 100 Angstrom Thick Silicon Layers

2007 ◽  
Author(s):  
Keivan Etessam-Yazdani ◽  
Mehdi Asheghi
Keyword(s):  
Thermal Conductivity ◽  
Conductivity Measurement ◽  
Thermal Characterization ◽  
Phonon Transport ◽  
Thermal Conductivity Measurement ◽  
Great Success ◽  
Silicon Structures ◽  
Thin Silicon ◽  
20 Nm

Experimental measurement of thermal conductivity is considered the most reliable tool for the study of phonon transport in ultra-thin silicon structures. While there has been a great success in thermal conductivity measurement of ultra-thin silicon layers down to 20 nm over the past decade, it is not clear if the existing techniques and tools can be extended to the measurements of sun 100 Angstrom layers. In this paper, an analytical study of the feasibility of electrical Joule heating and thermometry in patterned metal bridges is presented. It is concluded that thermal conductivity of silicon layers as thin as 5 nm can be obtained (uncertainty 20%) by performing steady-state measurements using an on-substrate nanoheater structure. The thermal characterization of silicon layers as thin as 1 nm may be possible using frequency domain measurements.

Thermal Conductivity Measurement of In0.10Ga0.90As0.96N0.04 Thin Film

2017 ◽  
Author(s):  
Antony Jan ◽  
Ramez Cheaito ◽  
Kenneth E. Goodson ◽  
Bruce M. Clemens
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Indium Gallium Arsenide ◽  
Optical Fibers ◽  
Conductivity Measurement ◽  
Chemical Vapor ◽  
Mean Free Path ◽  
Thermal Conductivity Measurement ◽  
Optical Fiber Communications ◽  
Fiber Communications

Dilute indium gallium arsenide nitrides (InxGa1-xAs1-yNy) are valuable in photonic applications as long wavelength emitters and for pairing with silica optical fibers for low attenuation optical fiber communications. The reliable operation of these devices is tied to a precise temperature control and the knowledge of the thermal properties of their components. However, the thermal conductivity of bulk or thin film InGaAsN of any composition are, to the best of our knowledge, not available in literature. In response, we use time-domain thermoreflectance (TDTR) to measure the thermal conductivity of a 78 nm In0.10Ga0.90As0.96N0.04 film grown by metalorganic chemical vapor deposition (MOCVD) on GaAs substrate. The thermal conductivity of In0.10Ga0.90As0.96N0.04 is found to be 6 +/− 0.5 Wm−1K−1, a factor of two lower than that of bulk In0.10Ga0.90As. To our knowledge this is the first reported thermal conductivity measurement on InGaAsN. We also present an analytical model for predicting the thermal conductivity of InGaAsN for any composition. Using this model, we find that the reduction in thermal conductivity can be attributed to the scattering of phonons by nitrogen impurities and boundary scattering of long mean free path phonons from the film thickness.

scholarly journals Anisotropic thermal conductivity measurement of organic thin film with bidirectional 3ω method

2021 ◽  
Vol 92 (3) ◽  
pp. 034902
Author(s):  
Shingi Yamaguchi ◽  
Takuma Shiga ◽  
Shun Ishioka ◽  
Tsuguyuki Saito ◽  
Takashi Kodama ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement ◽  
Organic Thin Film ◽  
3Ω Method ◽  
Anisotropic Thermal Conductivity
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