Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film

2008 ◽  
Vol 79 (5) ◽  
pp. 054902 ◽  
Author(s):  
Heng-Chieh Chien ◽  
Da-Jeng Yao ◽  
Mei-Jiau Huang ◽  
Tien-Yao Chang
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement ◽  
Interface Thermal Resistance ◽  
Sio2 Thin Film

Characterisation of high thermal conductivity thin-film substrate systems and their interface thermal resistance

2018 ◽  
Vol 334 ◽  
pp. 233-242 ◽  
Author(s):  
Alireza Moridi ◽  
Liangchi Zhang ◽  
Weidong Liu ◽  
Steven Duvall ◽  
Andrew Brawley ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
High Thermal Conductivity ◽  
Interface Thermal Resistance ◽  
Film Substrate

Thermal Conductivity Measurement of In0.10Ga0.90As0.96N0.04 Thin Film

2017 ◽  
Author(s):  
Antony Jan ◽  
Ramez Cheaito ◽  
Kenneth E. Goodson ◽  
Bruce M. Clemens
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Indium Gallium Arsenide ◽  
Optical Fibers ◽  
Conductivity Measurement ◽  
Chemical Vapor ◽  
Mean Free Path ◽  
Thermal Conductivity Measurement ◽  
Optical Fiber Communications ◽  
Fiber Communications

Dilute indium gallium arsenide nitrides (InxGa1-xAs1-yNy) are valuable in photonic applications as long wavelength emitters and for pairing with silica optical fibers for low attenuation optical fiber communications. The reliable operation of these devices is tied to a precise temperature control and the knowledge of the thermal properties of their components. However, the thermal conductivity of bulk or thin film InGaAsN of any composition are, to the best of our knowledge, not available in literature. In response, we use time-domain thermoreflectance (TDTR) to measure the thermal conductivity of a 78 nm In0.10Ga0.90As0.96N0.04 film grown by metalorganic chemical vapor deposition (MOCVD) on GaAs substrate. The thermal conductivity of In0.10Ga0.90As0.96N0.04 is found to be 6 +/− 0.5 Wm−1K−1, a factor of two lower than that of bulk In0.10Ga0.90As. To our knowledge this is the first reported thermal conductivity measurement on InGaAsN. We also present an analytical model for predicting the thermal conductivity of InGaAsN for any composition. Using this model, we find that the reduction in thermal conductivity can be attributed to the scattering of phonons by nitrogen impurities and boundary scattering of long mean free path phonons from the film thickness.

scholarly journals Anisotropic thermal conductivity measurement of organic thin film with bidirectional 3ω method

2021 ◽  
Vol 92 (3) ◽  
pp. 034902
Author(s):  
Shingi Yamaguchi ◽  
Takuma Shiga ◽  
Shun Ishioka ◽  
Tsuguyuki Saito ◽  
Takashi Kodama ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement ◽  
Organic Thin Film ◽  
3Ω Method ◽  
Anisotropic Thermal Conductivity
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