scholarly journals Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor

2014 ◽  
Vol 62 (3) ◽  
pp. 583-588
Author(s):  
M. Mazur ◽  
J. Domaradzki ◽  
D. Wojcieszak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Optical And Electrical Properties ◽  
Electrical Measurements ◽  
Glass Substrates ◽  
Vanadium Doping ◽  
Transparent Oxide

Abstract In this paper, the influence of vanadium doping on optical and electrical properties of titanium dioxide thin films has been discussed. The (Ti-V)Ox thin films was deposited on silicon and Corning glass substrates using high energy reactive magnetron sputtering process. Measurements performed with the aid of x-ray diffraction revealed, that deposited thin film was composed of nanocrystalline mixture of TiO2-anatase, V2O3 and β-V2O5 phases. The amount of vanadium in the thin film, estimated on the basis of energy dispersive spectroscopy measurement, was equal to 3 at. %. Optical properties were evaluated based on transmission and reflection measurements. (Ti-V)Ox thin film was well transparent and the absorption edge was shifted by only 11 nm towards longer wavelengths in comparison to undoped TiO2. Electrical measurements revealed, that investigated thin film was transparent oxide semiconductors with n-type electrical conduction and resistivity of about 2.7 · 105 Ωcm at room temperature. Additionally, measured I-V characteristics of TOS-Si heterostructure were nonlinear and asymmetrical.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

scholarly journals Corrugated Photoactive Thin Films for Flexible Strain Sensor

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1970 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Tensile Strain ◽  
Strain Sensor ◽  
Strain Sensors ◽  
Optical And Electrical Properties ◽  
Strain Sensing ◽  
Dc Voltage ◽  
Flexible Strain Sensor

In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.

scholarly journals Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
J. Santos Cruz ◽  
S. A. Mayén Hernández ◽  
F. Paraguay Delgado ◽  
O. Zelaya Angel ◽  
R. Castanedo Pérez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Peroxide ◽  
Photocatalytic Activity ◽  
Electrical Properties ◽  
Absolute Temperature ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Blue Solution

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

scholarly journals Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 384 ◽  
Author(s):  
Maximilian Lederer ◽  
Thomas Kämpfe ◽  
Norman Vogel ◽  
Dirk Utess ◽  
Beate Volkmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hafnium Oxide ◽  
Orthorhombic Phase ◽  
Vital Role ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Electrical Measurements ◽  
Fully Depleted ◽  
Scanning Transmission

The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator (FDSOI) ferroelectric field effect transistor (FeFET). Both HfO2 films showed a predominately orthorhombic phase in accordance with electrical measurements and X-ray diffraction XRD data. Furthermore, a stronger texture is found for the microstructure of the Si doped HfO2 (HSO) thin film, which is attributed to stress conditions inside the film stack during crystallization. For the HSO thin film fabricated in a metal-oxide-semiconductor (MOS) like structure, a different microstructure, with no apparent texture as well as a different fraction of orthorhombic phase is observed. The 22 nm FDSOI FeFET showed an orthorhombic phase for the HSO layer, as well as an out-of-plane texture of the [111]-axis, which is preferable for the application as non-volatile memory.

scholarly journals Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets

1991 ◽  
Vol 14 (3) ◽  
pp. 111-118 ◽  
Author(s):  
C. Geoffroy ◽  
G. Campet ◽  
F. Menil ◽  
J. Portier ◽  
J. Salardenne ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Atomic Ratio ◽  
Optical And Electrical Properties ◽  
Argon Gas ◽  
Glass Substrates ◽  
Different Types ◽  
Spray Technique ◽  
Tin Oxide Films

Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2or SnO2–SnF2mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

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