Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Texturing and Dielectric Properties of Laser Deposited BaTiO3 Thin Films Grown on Heated Substrates

1991 ◽  
Vol 243 ◽  
Author(s):  
M.D. Vaudin ◽  
L.P. Cook ◽  
W. Wong-Ng ◽  
P.K. Schenck ◽  
P.S. Brody ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray

AbstractThin films of BaTiO3 were deposited on platinum-coated silicon substrates using pulsed laser deposition and characterized using electron microscopy, powder x-ray diffraction and electrical measurements. The microstructure consisted of columnar BaTiO3 grains oriented normal to the substrate. Two preferred orientations were observed, with either the (001) or (111) planes of BaTiO3 being parallel to the substrate. The electrical properties of two films were measured and it was found that the (111) film was ferroelectric and the (001) film was not. Possible reasons for this are discussed.

Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

2000 ◽  
Vol 15 (9) ◽  
pp. 1962-1971 ◽  
Author(s):  
R. E. Koritala ◽  
M. T. Lanagan ◽  
N. Chen ◽  
G. R. Bai ◽  
Y. Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Si Substrates ◽  
Antiferroelectric Phase

Polycrystalline Pb(ZrxTi1−x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450–525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

scholarly journals Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gyu-bong Cho ◽  
Tae-hoon Kwon ◽  
Tae-hyun Nam ◽  
Sun-chul Huh ◽  
Byeong-keun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Properties ◽  
Discharge Capacity ◽  
Oxygen Deficiency ◽  
Oxide Phase ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Nickel Oxide

LiNiO2thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2thin film. The ZrO2-coated LiNiO2thin film provided an improved discharge capacity compared to bare LiNiO2thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2coating layer.

Effect of structural in-depth heterogeneities on electrical properties of Pb(Zr0.52Ti0.48) O3 thin films as revealed by nano-beam X-ray diffraction

2016 ◽  
Vol 120 (10) ◽  
pp. 104101 ◽  
Author(s):  
N. Vaxelaire ◽  
V. Kovacova ◽  
A. Bernasconi ◽  
G. Le Rhun ◽  
M. Alvarez-Murga ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray
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