Technique to improve CMRR at high frequencies in CMOS OTA-C filters

2013 ◽  
Vol 61 (3) ◽  
pp. 697-703
Author(s):  
G. Blakiewicz

Abstract In this paper a technique to improve the common-mode rejection ratio (CMRR) at high frequencies in the OTA-C filters is proposed. The technique is applicable to most OTA-C filters using CMOS operational transconductance amplifiers (OTA) based on differential pairs. The presented analysis shows that a significant broadening of CMRR bandwidth can be achieved by using a differential pair with the bodies of transistors connected to AC ground, instead of using a pair with the bodies connected to the sources. The key advantages of the technique are: no increase in power consumption (except for an optional tuning circuit), a small increase of a chip area, a slight modification of the original filter. The simulation results for exemplary OTAs and a low-pass filter, designed in a 0.35 μm CMOS process, show the possibility of broadening the CMRR bandwidth several times.

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 734
Author(s):  
Karolis Kiela ◽  
Marijan Jurgo ◽  
Vytautas Macaitis ◽  
Romualdas Navickas

This article presents a wideband reconfigurable integrated low-pass filter (LPF) for 5G NR compatible software-defined radio (SDR) solutions. The filter uses Active-RC topology to achieve high linearity performance. Its bandwidth can be tuned from 2.5 MHz to 200 MHz, which corresponds to a tuning ratio of 92.8. The order of the filter can be changed between the 2nd, 4th, or 6th order; it has built-in process, voltage, and temperature (PVT) compensation with a tuning range of ±42%; and power management features for optimization of the filter performance across its entire range of bandwidth tuning. Across its entire order, bandwidth, and power configuration range, the filter achieves in-band input-referred third-order intercept point (IIP3) between 32.7 dBm and 45.8 dBm, spurious free dynamic range (SFDR) between 63.6 dB and 79.5 dB, 1 dB compression point (P1dB) between 9.9 dBm and 14.1 dBm, total harmonic distortion (THD) between −85.6 dB and −64.5 dB, noise figure (NF) between 25.9 dB and 31.8 dB and power dissipation between 1.19 mW and 73.4 mW. The LPF was designed and verified using 65 nm CMOS process; it occupies a 0.429 mm2 area of silicon and uses a 1.2 V supply.


2013 ◽  
Vol 562-565 ◽  
pp. 1132-1136
Author(s):  
Xiao Wei Liu ◽  
Jian Yang ◽  
Song Chen ◽  
Liang Liu ◽  
Rui Zhang ◽  
...  

In this paper, we design a high-order switched capacitor filter for rapid change parameter converter. This design uses a structure which consists of three biquads filter sub-units. The design is a 6th-order SC elliptic low-pass filter, and the sample frequency is 250 kHz. By the MATLAB Simulink simulation, the system can meet the design requirements in the time domain. In this paper, the 6th-order switched capacitor elliptic low-pass filter was implemented under 0.5 um CMOS process and simulated in Cadence. The final simulation results show that the pass-band cutoff frequency is 10 kHz, and the maximum pass-band ripple is about 0.106 dB. The stop-band cutoff frequency is 20 kHz, and the minimum stop-band attenuation is 74.78 dB.


Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1547
Author(s):  
Xiangyu Chen ◽  
Yasuhiro Takahashi

In this paper, a transimpedance amplifier (TIA) based on floating active inductors (FAI) is presented. Compared with conventional TIAs, the proposed TIA has the advantages of a wider bandwidth, lower power dissipation, and smaller chip area. The schematics and characteristics of the FAI circuit are explained. Moreover, the proposed TIA employs the combination of capacitive degeneration, the broadband matching network, and the regulated cascode input stage to enhance the bandwidth and gain. This turns the TIA design into a fifth-order low pass filter with Butterworth response. The TIA is implemented using 0.18 μ m Rohm CMOS technology and consumes only 10.7 mW with a supply voltage of 1.8 V. When used with a 150 fF photodiode capacitance, it exhibits the following characteristics: gain of 41 dB Ω and −3 dB frequency of 10 GHz. This TIA occupies an area of 180 μ m × 118 μ m.


Author(s):  
Paul C.-P. Chao ◽  
Li-Chi Hsu ◽  
Trong-Hieu Tran

A new miniaturized, non-dispersive, infrared (NDIR) sensor for CO2 intended to be installed in mobile phones and its drive/readout circuits are presented in this study. A typical NDIR sensor consists of three main components; an infrared (IR) light-emitter (light source), a gas chamber, a photo detector (PD) light receiver) and the associated drive/readout circuits. The geometry of the gas chamber is optimized to minimize the total module size to approximately 10 mm × 5 mm × 5 mm, which is much smaller than commercially-available gas sensors. Driver and readout circuits are successfully designed and taped out. The driver circuit intends to generate pulse width modulation (PWM) signal to control proper dimming of LED. The readout circuit, which acquires small signal from photo detector then converts to digital values, includes amplifier, low pass filter and analog-to-digital converter (ADC). The proposed circuit is fabricated by the TSMC 0.35-μm CMOS process, where the area is 4.527 mm2 while power consumption is 60.16 mW for the whole chip. The resolution is less than 12 ppm along with time constant is 0.1 sec.


2014 ◽  
Vol 609-610 ◽  
pp. 1072-1076
Author(s):  
Qiu Ye Lv ◽  
Chong He ◽  
Wen Jie Fan ◽  
Yu Feng Zhang ◽  
Xiao Wei Liu

In this Paper, a 4th-Order Low-Pass Gm-C Filter is Presented. for the Design of Operational Tranconductance Amplifier(OTA), it Adopts the Techniques of Current Division and Current Cancellation. these Techniques can Help to Achieve a Low Transconductance Value. for the Architecture of the 4th-Order Gm-C Filter, it Consists of Two Biquads. the Two Biquads are Cascade Connected. the Gm-C Low-Pass Filter has been Implemented under 0.5 μm CMOS Process Model. the Final Simulation Results Show the Cutoff Frequency of the Filter is 100Hz and the Stop-Band Attenuation is Larger than 60dB. the Power Consumption is Lower than 1mW and the Total Harmonic Distortion(THD) is -55dB.


2017 ◽  
Vol 20 (2) ◽  
pp. 90 ◽  
Author(s):  
Mayank Srivastava ◽  
Dinesh Prasad

This paper proposes a new purely active floating resistance simulation circuit employing two voltage differencing trans-conductance amplifiers (VDTAs). The proposed configuration enjoys following advantageous features; (i) purely active realization (ii) electronically tunable resistance (iii) no requirement of any active/passive component matching constraint (iv) good non-ideal behavior and (v) low sensitivity values. The Influence of VDTA terminal parasitics on high frequency behavior of proposed circuit is also investigated. The workability of proposed resistor simulator has been verified by an application example of voltage mode low-pass filter. To validate the theoretical analysis, SPICE simulations with TSMC 0.18μm CMOS process parameters have been performed. 


2013 ◽  
Vol 22 (06) ◽  
pp. 1350044 ◽  
Author(s):  
MOHAMMAD HOSSEIN MAGHAMI ◽  
AMIR M. SODAGAR

A new simple dual-output second generation current conveyor (DO-CCII) circuit is proposed. Designed in a standard 0.5-μm CMOS process, the circuit operates at ±1.5 V supply voltages with a total power consumption of 106 nW. Main characteristics of the proposed DO-CCII are its simplicity, small silicon area consumption, and not suffering from the body effect of MOS transistors. The proposed circuit is employed to implement a first-order low-pass filter with upper -3 dB cut-off frequency of as low as 3.2 Hz.


Sensors ◽  
2020 ◽  
Vol 20 (24) ◽  
pp. 7343
Author(s):  
Montree Kumngern ◽  
Nattharinee Aupithak ◽  
Fabian Khateb ◽  
Tomasz Kulej

This paper presents a 0.5 V fifth-order Butterworth low-pass filter based on multiple-input operational transconductance amplifiers (OTA). The filter is designed for electrocardiogram (ECG) acquisition systems and operates in the subthreshold region with nano-watt power consumption. The used multiple-input technique simplifies the overall structure of the OTA and reduces the number of active elements needed to realize the filter. The filter was designed and simulated in the Cadence environment using a 0.18 µm Complementary Metal Oxide Semiconductor (CMOS) process from Taiwan Semiconductor Manufacturing Company (TSMC). Simulation results show that the filter has a bandwidth of 250 Hz, a power consumption of 34.65 nW, a dynamic range of 63.24 dB, attaining a figure-of-merit of 0.0191 pJ. The corner (process, voltage, temperature: PVT) and Monte Carlo (MC) analyses are included to prove the robustness of the filter.


1964 ◽  
Vol 47 (3) ◽  
pp. 487-499 ◽  
Author(s):  
Deforest Mellon ◽  
Donald Kennedy

Intracellular recording techniques were used to study electrical activity in bipolar sensory cells associated with crayfish tactile receptors. Several lines of evidence indicate that spikes evoked by natural stimulation of the receptor originate at a dendritic locus. Although overshooting spikes are recorded in the soma in response to both natural and antidromic stimulation receptor potentials are observed only rarely, and, when present, their amplitude is less than 5 mv. Impulses propagating centrifugally into the soma following antidromic stimulation always exhibit an inflection in the rising phase of the spike; however, orthodromic spikes are usually uninflected. Occasionally, orthodromic responses (in the soma) exhibit rather unusual wave forms. Such spikes evoked by natural stimuli are indistinguishable from those elicited electrically in the dendrite, but they do not resemble antidromic impulses. Because the axonal and dendritic boundaries of the soma have a low safety factor for spike transmission, at high frequencies invasion of the soma by dendritic spikes is impeded and often blocked. The soma region can thus act as a low-pass filter. The significance of this self-limiting mechanism for the behavior of the animal is not known; it is suggested, however, that this impediment is a potentially critical one, and may, in other situations, have encouraged the evolution of alternative arrangements.


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