scholarly journals 0.5 V Fifth-Order Butterworth Low-Pass Filter Using Multiple-Input OTA for ECG Applications

Sensors ◽  
2020 ◽  
Vol 20 (24) ◽  
pp. 7343
Author(s):  
Montree Kumngern ◽  
Nattharinee Aupithak ◽  
Fabian Khateb ◽  
Tomasz Kulej
Keyword(s):  
Power Consumption ◽  
Dynamic Range ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Subthreshold Region ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Multiple Input ◽  
Low Pass ◽  
Fifth Order

This paper presents a 0.5 V fifth-order Butterworth low-pass filter based on multiple-input operational transconductance amplifiers (OTA). The filter is designed for electrocardiogram (ECG) acquisition systems and operates in the subthreshold region with nano-watt power consumption. The used multiple-input technique simplifies the overall structure of the OTA and reduces the number of active elements needed to realize the filter. The filter was designed and simulated in the Cadence environment using a 0.18 µm Complementary Metal Oxide Semiconductor (CMOS) process from Taiwan Semiconductor Manufacturing Company (TSMC). Simulation results show that the filter has a bandwidth of 250 Hz, a power consumption of 34.65 nW, a dynamic range of 63.24 dB, attaining a figure-of-merit of 0.0191 pJ. The corner (process, voltage, temperature: PVT) and Monte Carlo (MC) analyses are included to prove the robustness of the filter.

scholarly journals Wideband Reconfigurable Integrated Low-Pass Filter for 5G Compatible Software Defined Radio Solutions

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 734
Author(s):  
Karolis Kiela ◽  
Marijan Jurgo ◽  
Vytautas Macaitis ◽  
Romualdas Navickas
Keyword(s):  
Software Defined Radio ◽  
Dynamic Range ◽  
Noise Figure ◽  
Harmonic Distortion ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Filter Performance ◽  
Low Pass ◽  
Bandwidth Tuning

This article presents a wideband reconfigurable integrated low-pass filter (LPF) for 5G NR compatible software-defined radio (SDR) solutions. The filter uses Active-RC topology to achieve high linearity performance. Its bandwidth can be tuned from 2.5 MHz to 200 MHz, which corresponds to a tuning ratio of 92.8. The order of the filter can be changed between the 2nd, 4th, or 6th order; it has built-in process, voltage, and temperature (PVT) compensation with a tuning range of ±42%; and power management features for optimization of the filter performance across its entire range of bandwidth tuning. Across its entire order, bandwidth, and power configuration range, the filter achieves in-band input-referred third-order intercept point (IIP3) between 32.7 dBm and 45.8 dBm, spurious free dynamic range (SFDR) between 63.6 dB and 79.5 dB, 1 dB compression point (P1dB) between 9.9 dBm and 14.1 dBm, total harmonic distortion (THD) between −85.6 dB and −64.5 dB, noise figure (NF) between 25.9 dB and 31.8 dB and power dissipation between 1.19 mW and 73.4 mW. The LPF was designed and verified using 65 nm CMOS process; it occupies a 0.429 mm2 area of silicon and uses a 1.2 V supply.

scholarly journals A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5173 ◽  
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Dynamic Range ◽  
Current Trend ◽  
Cutoff Frequency ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Compact Size ◽  
Low Pass ◽  
Lock In

This paper presents a fully integrated Gm–C low pass filter (LPF) based on a current steering Gm reduction-tuning technique, specifically designed to operate as the output stage of a SoC lock-in amplifier. To validate this proposal, a first-order and a second-order single-ended topology were integrated into a 1.8 V to 0.18 µm CMOS (Complementary Metal-Oxide-Semiconductor) process, showing experimentally a tuneable cutoff frequency that spanned five orders of magnitude, from tens of mHz to kHz, with a constant current consumption (below 3 µA/pole), compact size (<0.0140 mm2/pole), and a dynamic range better than 70 dB. Compared to state-of-the-art solutions, the proposed approach exhibited very competitive performances while simultaneously fully satisfying the demanding requirements of on-chip portable measurement systems in terms of highly efficient area and power. This is of special relevance, taking into account the current trend towards multichannel instruments to process sensor arrays, as the total area and power consumption will be proportional to the number of channels.

Design of an Active-Gm-RC Reconfigurable Filter for the Multi-Mode Receiver

2013 ◽  
Vol 364 ◽  
pp. 458-462
Author(s):  
Lei Qian ◽  
Xiang Ning Fan
Keyword(s):  
Power Consumption ◽  
Power Supply ◽  
Frequency Offset ◽  
Cmos Process ◽  
Rf Cmos ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Rc Structure ◽  
Low Pass ◽  
Multi Mode

Based on TSMC 0.18m RF CMOS process a reconfigurable low-pass filter (LPF) is presented in this paper. The LPF adopts active-Gm-RC structure. By manually adjusting the capacitor arrays, the LPF can switch working mode and correct frequency offset caused by process deviation. The pre-layout simulation shows that with 1.8V power supply, the bandwidth ranges from 1.4MHz to 9.8MHz with a step of 1.4MHz. The out of band attenuation is about-80dB/10 octave and the power consumption is 0.43mW .

Design and Simulation of Switched Capacitor Filter for Speed Change Parameter Converter

2013 ◽  
Vol 562-565 ◽  
pp. 1132-1136
Author(s):  
Xiao Wei Liu ◽  
Jian Yang ◽  
Song Chen ◽  
Liang Liu ◽  
Rui Zhang ◽  
...  
Keyword(s):  
Stop Band ◽  
Cutoff Frequency ◽  
Rapid Change ◽  
Pass Band ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
The Time Domain

In this paper, we design a high-order switched capacitor filter for rapid change parameter converter. This design uses a structure which consists of three biquads filter sub-units. The design is a 6th-order SC elliptic low-pass filter, and the sample frequency is 250 kHz. By the MATLAB Simulink simulation, the system can meet the design requirements in the time domain. In this paper, the 6th-order switched capacitor elliptic low-pass filter was implemented under 0.5 um CMOS process and simulated in Cadence. The final simulation results show that the pass-band cutoff frequency is 10 kHz, and the maximum pass-band ripple is about 0.106 dB. The stop-band cutoff frequency is 20 kHz, and the minimum stop-band attenuation is 74.78 dB.

METHOD FOR MEASURING THE EQUIVALENT PARAMETERS OF INDUCTORS AS PART OF LOW-PASS FILTERS

2020 ◽  
pp. 19-29
Author(s):  
A. G. Zinovev ◽  
I. A. Shestakov
Keyword(s):  
The Self ◽  
Network Analyzer ◽  
Q Factor ◽  
Practical Application ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Loss Resistance ◽  
Low Pass ◽  
Low Pass Filters ◽  
Fifth Order

A method for measuring the self-capacitance, inductance, loss resistance, and Q-factor of inductors as part of an LC low-pass filter at its operating frequency is presented. An example of the practical application of this method for measuring the equivalent pa-rameters of inductors and capacitors as part of a fifth-order Cauer low-pass filter using network analyzer.

scholarly journals Floating Active Inductor Based Trans-Impedance Amplifier in 0.18 μm CMOS Technology for Optical Applications

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1547
Author(s):  
Xiangyu Chen ◽  
Yasuhiro Takahashi
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Chip Area ◽  
Active Inductors ◽  
Low Pass ◽  
Optical Applications ◽  
Fifth Order

In this paper, a transimpedance amplifier (TIA) based on floating active inductors (FAI) is presented. Compared with conventional TIAs, the proposed TIA has the advantages of a wider bandwidth, lower power dissipation, and smaller chip area. The schematics and characteristics of the FAI circuit are explained. Moreover, the proposed TIA employs the combination of capacitive degeneration, the broadband matching network, and the regulated cascode input stage to enhance the bandwidth and gain. This turns the TIA design into a fifth-order low pass filter with Butterworth response. The TIA is implemented using 0.18 μ m Rohm CMOS technology and consumes only 10.7 mW with a supply voltage of 1.8 V. When used with a 150 fF photodiode capacitance, it exhibits the following characteristics: gain of 41 dB Ω and −3 dB frequency of 10 GHz. This TIA occupies an area of 180 μ m × 118 μ m.

DGS-SMS Compact Fifth Order Low Pass Filter

2017 ◽  
Author(s):  
Heba El-Halabi ◽  
Soubhi Abou-Chahine ◽  
Darine Kaddour ◽  
Emmanuel Pistono ◽  
Philippe Ferrari
Keyword(s):  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Fifth Order

A New Small-Sized Non-Dispersive Infrared (NDIR) Sensor and its Drive/Readout Circuits

2016 ◽  
Author(s):  
Paul C.-P. Chao ◽  
Li-Chi Hsu ◽  
Trong-Hieu Tran
Keyword(s):  
Pulse Width Modulation ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Analog To Digital ◽  
Readout Circuits ◽  
Low Pass ◽  
Driver Circuit ◽  
Module Size ◽  
Gas Chamber

A new miniaturized, non-dispersive, infrared (NDIR) sensor for CO2 intended to be installed in mobile phones and its drive/readout circuits are presented in this study. A typical NDIR sensor consists of three main components; an infrared (IR) light-emitter (light source), a gas chamber, a photo detector (PD) light receiver) and the associated drive/readout circuits. The geometry of the gas chamber is optimized to minimize the total module size to approximately 10 mm × 5 mm × 5 mm, which is much smaller than commercially-available gas sensors. Driver and readout circuits are successfully designed and taped out. The driver circuit intends to generate pulse width modulation (PWM) signal to control proper dimming of LED. The readout circuit, which acquires small signal from photo detector then converts to digital values, includes amplifier, low pass filter and analog-to-digital converter (ADC). The proposed circuit is fabricated by the TSMC 0.35-μm CMOS process, where the area is 4.527 mm2 while power consumption is 60.16 mW for the whole chip. The resolution is less than 12 ppm along with time constant is 0.1 sec.

The Design of Gm-C Low-Pass Filter for Micromachined Gyroscope

2014 ◽  
Vol 609-610 ◽  
pp. 1072-1076
Author(s):  
Qiu Ye Lv ◽  
Chong He ◽  
Wen Jie Fan ◽  
Yu Feng Zhang ◽  
Xiao Wei Liu
Keyword(s):  
Process Model ◽  
Stop Band ◽  
Cutoff Frequency ◽  
Harmonic Distortion ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Simulation Results ◽  
Micromachined Gyroscope

In this Paper, a 4th-Order Low-Pass Gm-C Filter is Presented. for the Design of Operational Tranconductance Amplifier(OTA), it Adopts the Techniques of Current Division and Current Cancellation. these Techniques can Help to Achieve a Low Transconductance Value. for the Architecture of the 4th-Order Gm-C Filter, it Consists of Two Biquads. the Two Biquads are Cascade Connected. the Gm-C Low-Pass Filter has been Implemented under 0.5 μm CMOS Process Model. the Final Simulation Results Show the Cutoff Frequency of the Filter is 100Hz and the Stop-Band Attenuation is Larger than 60dB. the Power Consumption is Lower than 1mW and the Total Harmonic Distortion(THD) is -55dB.

Conception D'un Filtre Passe-Bas En Technologie Microruban

1997 ◽  
Vol 34 (2) ◽  
pp. 133-140
Author(s):  
Mohammed Bekhti
Keyword(s):  
Microstrip Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Technologie Microruban ◽  
Mathematical Expressions ◽  
Low Pass ◽  
Fifth Order

The article describes the design of a fifth order low pass filter using microstrip technology. Mathematical expressions are derived for this case (fifth order) and all component values are shown.

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