scholarly journals X-Ray Study on Residual Stress and Strength of TiC Thin Films Coated by CVD Method

2003 ◽  
Vol 52 (7) ◽  
pp. 738-743 ◽  
Author(s):  
Keisuke TANAKA ◽  
Toshimasa ITO ◽  
Yoshiaki AKINIWA ◽  
Takahiro ISHII
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
X Ray ◽  
Cvd Method

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

scholarly journals X-Ray Measurement of Residual Stress in Patterned Aluminum Thin Films Sputtered on Silicon Wafers.

1998 ◽  
Vol 41 (2) ◽  
pp. 290-296 ◽  
Author(s):  
Keisuke TANAKA ◽  
Yoshiaki AKINIWA ◽  
Kaoru INOUE ◽  
Hiroyuki OHTA
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Wafers ◽  
X Ray

Texture, residual stress and structural analysis of thin films using a combined X-ray analysis

2004 ◽  
Vol 450 (1) ◽  
pp. 34-41 ◽  
Author(s):  
L. Lutterotti ◽  
D. Chateigner ◽  
S. Ferrari ◽  
J. Ricote
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Structural Analysis ◽  
X Ray

Residual Stress of Aluminum Thin Films Sputtered on Silicon Wafers Measured by X-Ray Diffraction

1995 ◽  
Vol 39 ◽  
pp. 267-279
Author(s):  
Keisuke Tanaka ◽  
Keisaku Ishihara ◽  
Yoshiaki Akiniwa
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Stress Measurement ◽  
Biaxial Tension ◽  
Film Surface ◽  
Fiber Texture ◽  
Fiber Axis ◽  
X Ray ◽  
Plane Normal ◽  
Out Of Plane

A new method of the X-ray stress measurement was proposed for measuring the residual stress in Al thin films having the [111] fiber texture with the fiber axis perpendicular to the film surface. The strain was measured from Al 222 and 311 diffractions obtained by Cr-Kα radiation. The values of in-plane residual stresses σ11, σ22 and σ12, and out-of-plane normal residual stress, σ33 were determined from the measured strains by using the fundamental formulae derived on the basis of Reuss and Voigt models. The measured residual stress in the thin films was nearly equi-biaxial tension. The magnitude of the tensile residual stress decreased with increasing film thickness.

Residual Stress in Thin Films of Rf-Sputtered Aluminum by X-ray Multtaxial Stress Measurement

1995 ◽  
Vol 39 ◽  
pp. 433-438
Author(s):  
Shoukhi Ejiri ◽  
Zheng Lin ◽  
Tosihiko Sasaki ◽  
Yukio Hirose
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Stress Measurement ◽  
Multiaxial Stress ◽  
Argon Gas ◽  
X Ray

Residual stress in thin films of RF-sputtered aluminum coated on substrate of glass was measured by X-ray multiaxial stress measurement. The films were manufactured under the various conditions such as temperature of substrate ranged from 473K to 573K, and pressure of argon gas range from 0.0093Pato 13.3Pa respectively. These results brought comprehension that residual stress existed in tri-axial and that was influenced by temperature of substrate and pressure of argon gas. Residual stresses were unstable in range of less than 1.33Pa of pressure of argon gas.

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