Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

X-Ray Diffraction Measurements of Residual Stress Induced by Surface Compressing Methods

2012 ◽  
Vol 729 ◽  
pp. 199-204 ◽  
Author(s):  
Dávid Cseh ◽  
Valéria Mertinger
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Surface Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hardened Alloy ◽  
Compressive Stresses ◽  
Machine Parts ◽  
Stress States ◽  
Operational Behaviour

Residual stresses have a fundamental effect on the operational behaviour and lifetime of industrial products. The fatigue resistance of machine parts can be increased by introducing residual compressive stresses into the surface region. For certain machine parts especially in the vehicle industry the residual stress is strongly demanded by the quality control. For this reason, measuring the stress accurately is becoming increasingly important. The Almen test, which only gives a qualitative result, is widely used in the industry. Shot peening and rolling are methods which are suitable for creating elastic residual stresses. This paper examines the technologies used by Rába Futómű Nyrt. to increase the lifetime by means of residual stress. We performed analysis of the residual stress of samples shot peened the same way but under different heat treatment states. We compared the residual stress values of burnished and hardened shaft joints, and the residual stress states of gear made of hardened alloy, comparing the carbonized ones to ones which were shot peened under small intensity.

Effects of annealing parameters on residual stress and piezoelectric performance of ZnO thin films studied by X-ray diffraction and atomic force microscopy

2019 ◽  
Vol 52 (5) ◽  
pp. 951-959
Author(s):  
Jie-Nan Shen ◽  
Yi-Bo Zeng ◽  
Ma-Hui Xu ◽  
Lin-Hui Zhu ◽  
Bao-Lin Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Annealing Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Piezoelectric Performance

The residual stresses and piezoelectric performance of ZnO thin films under different annealing parameters have been studied by X-ray diffraction and atomic force microscopy (AFM). First, ZnO thin films with a thickness of 800 nm were grown on a Pt/Ti/SiO2/Si substrate by magnetron sputtering. Second, the orthogonal experimental method was selected to study the effects of annealing temperature, annealing time and oxygen content on the residual stresses of the ZnO thin films. The residual stresses of the ZnO thin films were measured by X-ray diffraction and the sin2ψ method. Finally, the three-dimensional topography and piezoelectric performance of the ZnO thin films were measured by AFM. The results showed that the oxygen content during the annealing process has the greatest effect on the residual stress, followed by the annealing temperature and annealing time. A minimum residual stress and optimal piezoelectric performance can be realized by annealing the ZnO thin film in pure oxygen at 723 K for 30 min.

Measurement of Residual Stresses in Thin Films by Two-Dimensional XRD

2006 ◽  
Vol 524-525 ◽  
pp. 613-618 ◽  
Author(s):  
Bob B. He
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Recent Progress ◽  
Stress Measurement ◽  
Incident Angle ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Stress Analysis

This paper introduces the recent progress in two-dimensional X-ray diffraction as well as its applications in residual stress analysis in thin films. The stress measurement with twodimensional x-ray diffraction can be done with low incident angle and is not limited to the peaks with high two-theta angles like the conventional method. When residual stresses of thin films are measured, a low incident angle is preferred to maximize the diffraction signals from the thin films surfaces instead of from the substrates and matrix materials. Since one stress measurement at one fixed incident angle is possible, stress gradients in depth can be measured by series of incident angles. Some experimental examples are given to show the stress measurement at low and fixed incident angle.

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Nanohardness of DC Magnetron Sputtered W – C Coatings as a Function of Composition and Residual Stresses

2015 ◽  
Vol 662 ◽  
pp. 107-110 ◽  
Author(s):  
Michal Novák ◽  
František Lofaj ◽  
Petra Hviščová ◽  
Rudolf Podoba ◽  
Marián Haršáni ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Magnetron Sputtering ◽  
Linear Increase ◽  
Indentation Modulus ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Compressive Stresses ◽  
Deposition Parameters

The effects of residual stresses in thin W-C based coatings were investigated with the aim to find their influence on nanohardness and indentation modulus. Ten samples of W-C based coatings were deposited on microslide glass substrates using DC magnetron sputtering at the identical deposition parameters. Their thickness was in the range from 500 to 600 nm. The residual stresses in the coatings varied from 1.5 GPa up to 4.4 GPa. Increase of residual stress caused linear increase of HITfrom 16 to 19.5 GPa. This increase was only the result of the compressive stresses. EITof the studied coatings was not sensitive to residual stresses and corresponded to 185 GPa ± 15 GPa.

X-Ray Diffraction Analysis of Steel with Oxidised Surface Layer

2016 ◽  
Vol 368 ◽  
pp. 99-102
Author(s):  
Lukáš Zuzánek ◽  
Ondřej Řidký ◽  
Nikolaj Ganev ◽  
Kamil Kolařík
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Oxide Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolytic Polishing ◽  
Small Depth

The basic principle of the X-ray diffraction analysis is based on the determination of components of residual stresses. They are determined on the basis of the change in the distance between atomic planes. The method is limited by a relatively small depth in which the X-ray beam penetrates into the analysed materials. For determination of residual stresses in the surface layer the X-ray diffraction and electrolytic polishing has to be combined. The article is deals with the determination of residual stress and real material structure of a laser-welded steel sample with an oxide surface layer. This surface layer is created during the rolling and it prevents the material from its corrosion. Before the X-ray diffraction analysis can be performed, this surface layer has to be removed. This surface layer cannot be removed with the help of electrolytic polishing and, therefore, it has to be removed mechanically. This mechanical procedure creates “technological” residual stress in the surface layer. This additional residual stress is removed by the electrolytic polishing in the depth between 20 and 80 μm. Finally, the real structure and residual stresses can be determined by using the X-ray diffraction techniques.

X-ray diffraction analysis of residual stresses in textured ZnO thin films

2017 ◽  
Vol 395 ◽  
pp. 16-23 ◽  
Author(s):  
E. Dobročka ◽  
P. Novák ◽  
D. Búc ◽  
L. Harmatha ◽  
J. Murín
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

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