scholarly journals Effects of Bias Voltage and Discharge Current on Mechanical Properties of TiN Film Deposited by DC Magnetron Sputtering

2003 ◽  
Vol 52 (6Appendix) ◽  
pp. 143-148
Author(s):  
Hirotaka TANABE ◽  
Yoshio MIYOSHI ◽  
Tohru TAKAMATSU ◽  
Hideyuki SUGIURA
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Discharge Current ◽  
Dc Magnetron Sputtering ◽  
Tin Film

Effect of Sputtering Gas Pressure and Bias Voltage on Mechanical Properties of TiN Coating Deposited by DC Magnetron Sputtering

2004 ◽  
Author(s):  
Hirotaka Tanabe ◽  
Yoshio Miyoshi ◽  
Tohru Takamatsu ◽  
Hitoshi Awano ◽  
Takaaki Yamano
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Adhesive Strength ◽  
Gas Pressure ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Bombarding Energy ◽  
Gas Pressures

The mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering under three sputtering gas pressures, 0.5Pa, 0.8Pa, and 1.76Pa were investigated. The residual stress once increased and then decreased with increasing bias voltage at 0.5Pa and 0.8Pa, but increased monotonously at 1.76Pa. These variations could be explained by the variations of the bombarding energy of a sputtered ion at each gas pressure. The variations of hardness and toughness correlated with the variation of residual stress. The variation of adhesive strength also could be explained by the variation of the bombarding energy with a model proposed in this study. A specific wear rate was also investigated, and it was found that to increase not only the hardness but also the adhesive strength is necessary to improve the wear resistance of TiN films.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Nanoscale Mechanical Properties of Nanoindented Ni48.8Mn27.2Ga24 Ferromagnetic Shape Memory Thin Film

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-5
Author(s):  
Xiaofei Fu ◽  
Chao Liu ◽  
Xili Lu ◽  
Xianli Li ◽  
Jingwei Lv ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Martensitic Transformation ◽  
Magnetron Sputtering ◽  
Shape Memory ◽  
Room Temperature ◽  
Shape Recovery ◽  
Recovery Ratio ◽  
Dc Magnetron Sputtering ◽  
Ferromagnetic Shape Memory

The structure and nanoscale mechanical properties of Ni48.8Mn27.2Ga24 thin film fabricated by DC magnetron sputtering are investigated systematically. The thin film has the austenite state at room temperature with the L21 Hesuler structure. During nanoindentation, stress-induced martensitic transformation occurs on the nanoscale for the film annealed at 823 K for 1 hour and the shape recovery ratio is up to 85.3%. The associated mechanism is discussed.

Effect of Sputtering Gas Pressure on Mechanical Properties of TiN Film Deposited by D. C. Magnetron Sputtering

2003 ◽  
Vol 2003.78 (0) ◽  
pp. _2-1_-_2-2_
Author(s):  
Hirotaka TANABE ◽  
Yoshio MIYOSHI ◽  
Tohru TAKAMATSU ◽  
Hitoshi AWANO
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Gas Pressure ◽  
Tin Film

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier

2010 ◽  
Vol 93-94 ◽  
pp. 578-582
Author(s):  
A. Pankiew ◽  
Win Bunjongpru ◽  
N. Somwang ◽  
S. Porntheeraphat ◽  
Sirapat Pratontep ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Diffusion Barrier ◽  
Rate Ratio ◽  
Growth Conditions ◽  
Flow Rate Ratio ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Tin Film

Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

Sign in / Sign up

Export Citation Format

Share Document