Contamination Control Study in Grown Oxide for Reliable CMOS Operations

2021 ◽  
Vol 07 (03) ◽  
pp. 6-9
Author(s):  
K Singh ◽  
Keyword(s):  
Present Article ◽  
Process Parameters ◽  
Main Parameter ◽  
Flat Band ◽  
Device Performance ◽  
Flat Band Voltage ◽  
Contamination Control ◽  
Mobile Ions ◽  
Control Study ◽  
Deposition Conditions

Contamination control in the grown oxide affects the device performance and considered as the main parameter in the fabrication process. The presence of mobile ions in the oxide shifts the flat-band voltage of the device and the key parameters responsible for this behavior are the repeatability of the process parameters and overall fabrication environment. Further cleanliness of the fabrication tool, stability of process parameters and deposition conditions can also contaminate the oxide quality. In present article various parameters such as thickness, cleanliness and process environment are studied and analyzed.

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Study of a-Si:H/μc-Si:H Heterojunction as Photosensor for Large Screen Projection Display

1992 ◽  
Vol 258 ◽  
Author(s):  
Weiqiang Han ◽  
Gaorong Han ◽  
Jianmin Qiao ◽  
Pija Du ◽  
Danmei Zhao ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Glow Discharge ◽  
Device Performance ◽  
Blocking Layer ◽  
Large Screen ◽  
Cvd Method ◽  
Projection Display ◽  
Large Screen Projection ◽  
Deposition Conditions ◽  
Structure Properties

ABSTRACTLiquid crystal light valve(LCLV) using an a-Si:H/μc-Si:H heterostructure as the photosensor and the nematic liquid crystal as the modulator has been firstly presented for large screen projection display. The a-Si:H photoconductor and μc-Si:H light blocking layer were prepared by a modified glow discharge CVD method. The optoelectric and structure properties of the μc-Si:H films deposited at different deposition conditions have been studied. The a-Si:H film and the continuously deposited pc-Si:H film possibly form an a-Si:H/μc-Si:H heterojunction. The electrical and optoelectric properties of the heterojunction has been studied.LCLV using a-Si:H/μc-Si:H heterostructure has shown that the most aspects of the device performance can be improved.

The detrimental effect of excess mobile ions in planar CH3NH3PbI3 perovskite solar cells

2016 ◽  
Vol 4 (33) ◽  
pp. 12748-12755 ◽  
Author(s):  
Yuanhang Cheng ◽  
Ho-Wa Li ◽  
Jian Qing ◽  
Qing-Dan Yang ◽  
Zhiqiang Guan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Detrimental Effect ◽  
Perovskite Solar Cells ◽  
Device Performance ◽  
Mobile Ions ◽  
Device Operation

Mobile ions not only have detrimental effects on device performance but also trigger the degradation of perovskite during device operation.

scholarly journals Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Sung Heo ◽  
Hyoungsun Park ◽  
Dong-Su Ko ◽  
Yong Su Kim ◽  
Yong Koo Kyoung ◽  
...  
Keyword(s):  
Work Function ◽  
Direct Evidence ◽  
Depth Profiling ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift
Sign in / Sign up

Export Citation Format

Share Document