An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency

2018 ◽  
Author(s):  
Rocco Giofre ◽  
Ferdinando Costanzo ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Manuela Sotgia ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Power Added Efficiency ◽  
High Power Amplifier

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 243-248
Author(s):  
Min Liu ◽  
Panpan Xu ◽  
Jincan Zhang ◽  
Bo Liu ◽  
Liwen Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Common Source ◽  
Power Performance ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

Design of Yb Fiber High Power Amplifier through 915nm Pumping

2011 ◽  
Vol 282-283 ◽  
pp. 42-46
Author(s):  
Zhi Qiang Zhang ◽  
Jian Hua Ren ◽  
Shu Qun Shen ◽  
Tong Gang Zhao
Keyword(s):  
Pump Power ◽  
Output Power ◽  
Power Amplifier ◽  
Rate Equation ◽  
High Power ◽  
Fiber Length ◽  
Gain Medium ◽  
Pump Source ◽  
High Power Amplifier ◽  
Single Emitter

Analyze the fiber amplified theory and obtain the transmission formula of pump and signal for the use of rate equation. In the experiment, take the Yb-doped double cladding fiber based on phosphor silicate as gain medium, high power single emitter in 915nm as pump source. According to gain fiber length obtained by the theory analyses, the output power achieves 20W above. Apply the cladding power stripper at the output end for stripping the remained pump power.

scholarly journals GaN Based HEMT Power Amplifier Design with 44.5dBm Output Power Operating at 5-7GHz

2021 ◽  
Vol 40 (4) ◽  
pp. 883-888
Author(s):  
Syed Mudassir Hussain ◽  
Talha Mir
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Frequency Band ◽  
High Power ◽  
Power Level ◽  
Output Power Level ◽  
Specific Power ◽  
Design System ◽  
High Power Amplifier ◽  
Simulation Results

The next-generation wireless communication systems including satellite, radar, and mobile communications need application-specific power amplifiers that can operate at very high frequencies and high power with the overall minimum power consumption from the system. To meet such stringent requirements there is a rising interest in amplifier designs based on GaN transistors. This paper presents an improved design of a high power amplifier based on GaN HEMT transistor operating at the frequency band 5GHz – 7GHz with optimized output power level. The presented design is based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript, we have considered the stability of the amplifier for the whole operating frequency band, its input and output matching impedance, gain, and maximum output power. The design of the Radio Frequency (RF) power amplifier and its overall performance are carried out using an advanced design system (ADS). The simulation results of the device stability and the output power level achieved provides a good comparison with the parameters and specifications of the device used. For better correlations in the simulation results and measurements, the accuracy of passive element designs are also considered. The simulation and experiment results show that the designed high power amplifier has achieved an output power level of 44.5 dBm at 1 dB compression point.

scholarly journals Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth

2020 ◽  
pp. 166-170
Author(s):  
Syed Mudassir Hussain
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Power Efficiency ◽  
Satellite Communication ◽  
Design System ◽  
Passive Element ◽  
Power Efficient ◽  
Power Added Efficiency ◽  
High Power Amplifier ◽  
Simulation Results

For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.

scholarly journals Design of high power amplifier based on wilkinson power combiner for wireless communications

2021 ◽  
Vol 23 (1) ◽  
pp. 330
Author(s):  
Tran Van Hoi ◽  
Ngo Thi Lanh
Keyword(s):  
Reflection Coefficient ◽  
Power Amplifier ◽  
Mobile Communications ◽  
High Power ◽  
Satellite Communication ◽  
Oxide Semiconductor ◽  
Design System ◽  
Power Combiner ◽  
Power Added Efficiency ◽  
High Power Amplifier

Thisarticlepresentsthedesign and fabrication ofa high power amplifierbased onwilkinson power combiner. A 45W basic amplifier module isdesigned usinglaterally-diffused metal-oxide semiconductor (LDMOS) fieldeffect transistor (FET) PTFA260451E transistor. Wilkinson power combineris used to combine two input powers toproduce 90W of power. Theproposed power amplifier is researched, designed and optimized usingadvanced design system(ADS) software.Experimental results show that thegain is 11.5 dB greater than at 2.45-3.0GHz frequency band and achieving maximum power gain of 13.5dB at 2.65GHz centre frequency; output power increased to 49.3dBm; Power added efficiency of 62.1% and good impedances matching: input reflection coefficient (S11)<-10dB, output reflection coefficient (S22)<-15dB. The designed amplifier can be used for4G, 5G mobile communications andS-band satellite communication.

scholarly journals Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

2019 ◽  
Vol 11 (7) ◽  
pp. 625-634
Author(s):  
Eduardo Oreja Gigorro ◽  
Emilio Delgado Pascual ◽  
Juan José Sánchez Martínez ◽  
María Luz Gil Heras ◽  
Virginia Bueno Fernández ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Duty Cycle ◽  
Pulse Width ◽  
Pulse Mode ◽  
Gate Length ◽  
Electronic Warfare ◽  
Power Added Efficiency ◽  
High Power Amplifier

AbstractA 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 µs pulse width.

scholarly journals X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

2018 ◽  
Vol 7 (5) ◽  
pp. 124-130 ◽  
Author(s):  
Y.-J. Lee ◽  
C.-Y. Chang ◽  
Y.-H. Chou ◽  
I-Y. Tarn ◽  
J. Y.-C. Yaung ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Maximum Output Power ◽  
Maximum Output ◽  
High Electron ◽  
Power Combining ◽  
Hybrid Power ◽  
High Power Amplifier ◽  
X Band

An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.

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